Abstract
Heteroepitaxy, the formation of crystalline, layered structures of different materials, is the driving force for a large part of current solid state science. Most heteroepitaxial applications require and assume a uniform two-dimensional planar structure, based on the simplest film growth concepts. Nevertheless, the propensity for three-dimensional nucleation is a strong element in film formation. In this paper we describe our recent work in studies of clustering for overlayers on Si. Our studies consider the set of adsorbates, Ge, Sn and Ga on substrates of Si, GaAs and As terminated Si surfaces. The use of the As terminated surface permits an interesting transition between the two primary semiconductors. We show that the kinetics of cluster growth is well described by ripening processes, which can, in turn, be thought of as special cases of scaling laws predicted by self-similarity concepts.
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Zinke-Allmang, M., Feldman, L.C., Nakahara, S. (1990). Three-Dimensional Clustering on Surfaces: Overlayers on Si. In: Lagally, M.G. (eds) Kinetics of Ordering and Growth at Surfaces. NATO ASI Series, vol 239. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0653-5_29
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DOI: https://doi.org/10.1007/978-1-4613-0653-5_29
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