Abstract
We have performed x-ray diffraction studies of two examples of metal overlayers on semiconductor surfaces in the monolayer coverage regime: (1) Pb on Si(111) and Ge(111) and (2) Au on Si(111).
LEED patterns show that Pb has two different √3 structures on both Si(111) and Ge(111) as a function of coverage. The low coverage structure is the same on both surfaces with one Pb atom per unit cell. The high coverage phase is a slightly distorted Pb (111) overlayer for Ge(111). For Si(111) the structure is an incommensurate Pb(111) overlayer, as revealed by the x-ray diffraction data. We have also made studies of the high temperature 1×1 phase of Pb/Ge(111) where we observe a halo of diffuse scattering about the origin due to a molten Pb overlayer.
Au on Si (111) is known to have a 5×1 structure saturating at about 0.4 ML, a √3 structure at 1 ML and a 6×6 at 1.5 ML. We have performed x-ray diffraction studies of all three structures and will discuss the structural analysis and the complications arising from disorder.
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© 1990 Plenum Press, New York
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Feidenhans’l, R., Grey, F., Nielsen, M., Johnson, R.L. (1990). Structure and Ordering of Metal Overlayers on Si(111) and Ge(111) Surfaces. In: Lagally, M.G. (eds) Kinetics of Ordering and Growth at Surfaces. NATO ASI Series, vol 239. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0653-5_11
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DOI: https://doi.org/10.1007/978-1-4613-0653-5_11
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