Spin-Splitted Phase Transition in the Quantized Hall Effect in Narrow-Gap Hg(1-x)CdxTe Inversion Layers

dos Santos, Marta Silva; Marques, Gilmar Eugenio

doi:10.1007/978-1-4613-0605-4_25

Marta Silva dos Santos² &
Gilmar Eugenio Marques³

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Abstract

The scattering of electrons by impurities in spin-splitted states on the inversion layer of narrow-gap semiconductors is studied in the presence of a quantizing magnetic field. The electron-electron exchange interaction is also included. Depending on the system, it is shown that the calculated longitudinal magneto-conductivity, as a function of the magnetic field B, presents discontinuities when the ratio of the average exchange potential to the average electron-impurity potential increases.

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Authors and Affiliations

Departamento de Física, Universidade do Amazonas, 69000, Manaus, AM, Brazil
Marta Silva dos Santos
Departamento de Física, Universidade Federal de Sãoo Carlos, 13560, São Carlos, SP, Brazil
Gilmar Eugenio Marques

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Marta Silva dos Santos
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Gilmar Eugenio Marques
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Editors and Affiliations

Instituto de Física Teórica, UNESP, Rua Pamplona 145, 01405, São Paulo, SP, Brazil
V. C. Aguilera-Navarro

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dos Santos, M.S., Marques, G.E. (1990). Spin-Splitted Phase Transition in the Quantized Hall Effect in Narrow-Gap Hg_(1-x)Cd_xTe Inversion Layers. In: Aguilera-Navarro, V.C. (eds) Condensed Matter Theories. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0605-4_25

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DOI: https://doi.org/10.1007/978-1-4613-0605-4_25
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-7888-7
Online ISBN: 978-1-4613-0605-4
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