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Crystal Growth in Science and Technology pp 143–165Cite as

Fundamentals of Epitaxy

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Part of the book series: NATO ASI Series ((NSSB,volume 210))

Abstract

This contribution introducing us to the fundamental knowledge of epitaxy is divided into three parts. In Part I the historical basis is reviewed and the geometrical aspects of epitaxy are treated. In Part II these aspects are examined from the point of view of equilibrium thermodynamics and some examples are given. In Part III references are given.

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References

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Author information

Authors and Affiliations

  1. CRMC2-CNRS, Campus de Luminy, Case 913, F-13288, Marseille Cedex 09, France

    R. Kern

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  1. R. Kern
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Editor information

Editors and Affiliations

  1. Swiss Federal Institute of Technology, Zurich, Switzerland

    H. Arend  & J. Hulliger  & 

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© 1989 Plenum Press, New York

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Kern, R. (1989). Fundamentals of Epitaxy. In: Arend, H., Hulliger, J. (eds) Crystal Growth in Science and Technology. NATO ASI Series, vol 210. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0549-1_8

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  • DOI: https://doi.org/10.1007/978-1-4613-0549-1_8

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-7861-0

  • Online ISBN: 978-1-4613-0549-1

  • eBook Packages: Springer Book Archive

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