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Liquid Phase Epitaxy of Garnets

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Crystal Growth in Science and Technology

Part of the book series: NATO ASI Series ((NSSB,volume 210))

Abstract

Rare earth (R) iron garnets (R3Fe5O12) have excellent properties for magnetic, magneto-optic and microwave applications. For magnetic bubble memory devices requiring single crystal films of several micrometer thickness an epitaxial technique had to be developed. The know-how concerning congruently melting non-magnetic garnet crystal growth from the melt for laser applications was used to grow gallium gadolinium garnet as suitable substrate crystals. On wafers of these crystals single crystal layers can be grown by liquid phase epitaxy (LPE) from very diluted high temperature solutions known from the flux growth of yttrium iron garnet (YIG) for microwave applications. Substrate crystals with garnet structure having a lattice constant in the range from 1.22 nm to 1.26 nm are now available [1]. This allows the growth of magnetic garnet layers with a wide variety of compositions to tailor the properties for various applications. LPE is a well suited process to study crystal growth phenomena, too. Some advantageous features of garnet LPE with respect to crystal growth will be discussed. Occasionally comparison to LPE of semiconductors is made.

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Authors and Affiliations

  1. Philips GmbH Forschungslaboratorium Hamburg, Vogt-Kölln-Str. 30, D-2000, Hamburg 54, Germany

    W. Tolksdorf

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  1. W. Tolksdorf
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  1. Swiss Federal Institute of Technology, Zurich, Switzerland

    H. Arend  & J. Hulliger  & 

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© 1989 Plenum Press, New York

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Tolksdorf, W. (1989). Liquid Phase Epitaxy of Garnets. In: Arend, H., Hulliger, J. (eds) Crystal Growth in Science and Technology. NATO ASI Series, vol 210. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0549-1_25

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  • DOI: https://doi.org/10.1007/978-1-4613-0549-1_25

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-7861-0

  • Online ISBN: 978-1-4613-0549-1

  • eBook Packages: Springer Book Archive

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