Measurement of Structure-Factor Phases by Electron Diffraction for the Study of Bonding in Non-Centrosymmetric Semiconductors

  • J. C. H. Spence
  • J. M. Zuo
  • R. Hoier
Part of the NATO ASI Series book series (NSSB, volume 203)


A quantity of fundamental interest for the study of semiconductors is the ground-state charge-density distribution. This is surprisingly difficult to measure with sufficient accuracy to reveal bonding effects in crystals, since the bond charge typically represents less than 0.01% of the total charge-density. For semiconductors containing a center of symmetry for which large single crystals can be grown (such as silicon), X-ray diffraction techniques can produce rather accurate results1. An urgent need exists, however, for a method which can be applied to non-centrosymmetric semiconductors and other materials which are crystalline only on a sub-micron scale.


Acta Cryst Phase Determination Kikuchi Line Transmission Electron Diffraction Incident Beam Direction 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • J. C. H. Spence
    • 1
  • J. M. Zuo
    • 1
  • R. Hoier
    • 2
  1. 1.Department of PhysicsArizona State UniversityTempeUSA
  2. 2.Dept. of PhysicsUniversity of Trondheim-NTHTrondheimNorway

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