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Evaluation of Advanced Semiconductor Materials by Electron Microscopy pp 87–99Cite as

Determination of Composition and Ionicity by Critical Voltage and Other Electron Diffraction Methods

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Part of the book series: NATO ASI Series ((NSSB,volume 203))

Abstract

Several methods for determination of structure factors/structure parameters by convergent beam electron diffraction (CBED) can be described in terms of the gap, (ϒj-ϒi)min, at the dispersion surface. Most accurate may be those based upon measurement of the condition for zero gap, revaled by zero contrast of a Kikuchi or Kossel line. By measurement in non-systematic cases, measured either as a critical voltage or as a diffraction condition, the scope of the method is increased. Application of non-systematical critical voltage measurement to various types of semiconductor structures: ZnS, diamond, rutile type is shown.

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Author information

Authors and Affiliations

  1. Department of Physics, University of Oslo, Blindern, Oslo, Norway

    J. Gjønnes, H. Matsuhata & K. Gjønnes

  2. Toyota Technological Institute, Tempaku, Nagoya, Japan

    H. Matsuhata

Authors
  1. J. Gjønnes
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  2. H. Matsuhata
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  3. K. Gjønnes
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Editor information

Editors and Affiliations

  1. University of Bristol, Bristol, UK

    David Cherns

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© 1989 Plenum Press, New York

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Gjønnes, J., Matsuhata, H., Gjønnes, K. (1989). Determination of Composition and Ionicity by Critical Voltage and Other Electron Diffraction Methods. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_7

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  • DOI: https://doi.org/10.1007/978-1-4613-0527-9_7

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-7850-4

  • Online ISBN: 978-1-4613-0527-9

  • eBook Packages: Springer Book Archive

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