Summary
This paper shows how convergent beam electron diffraction has been used at Bristol to study strains, defects and composition profiles in plan-view semiconductor multilayers. It is shown that epitaxial strains in bicrystals and multilayers can be measured down to ~ 0.1% and that varying strain fields near dislocations and interfaces can be investigated with high sensitivity. It is also shown that convergent beam diffraction gives a powerful new method of examining superlattice reflections from both periodic and irregular multilayer structures and studies of single quantum well samples of AlGaAs/GaAs and InP/InGaAs, which give well thicknesses to near monolayer precision, are also described.
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© 1989 Plenum Press, New York
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Cherns, D. (1989). Convergent Beam Electron Diffraction Studies of Defects, Strains and Composition Profiles in Semiconductors. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_5
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DOI: https://doi.org/10.1007/978-1-4613-0527-9_5
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-7850-4
Online ISBN: 978-1-4613-0527-9
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