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II-VI Semiconductor Interfaces

  • G. Feuillet
Conference paper
Part of the NATO ASI Series book series (NSSB, volume 203)

Abstract

We shall review recent T.E.M. results on II-VI semiconductor Molecular Beam Epitaxial growth. The emphasis will be put on the structure of interfaces in both high misfit systems such as (001)ZnTe, (001) CdTe and (111)CdTe on (001)GaAs substrates, and low misfit ones such as (001)CdTe on (001) Cd0.96Zn0.04Te. Quantum wells and superlattices such as CdTe/ZnTe and HgTe/CdTe will also be investigated.

Keywords

Misfit Dislocation Lattice Image CdTe Layer Molecular Beam Epitaxial CdTe Growth 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • G. Feuillet
    • 1
  1. 1.Commissariat à l’Energie Atomique, C.E.N./Grenoble Département de Recherche FondamentaleService de Physique Groupe Physique des SemiconducteursGrenoble, CedexFrance

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