Abstract
An outstanding question in semiconductor strained layer epitaxy is the details of lattice mismatch relaxation via the introduction, propagation and interaction of misfit dislocations. In this paper, we review present understanding of the strained layer relaxation process and describe recent in-situ relaxation experiments in a transmission electron microscope which, to our knowledge, have enabled us for the first time to directly observe misfit dislocation phenomena in strained layer semiconductors in realtime. These experiments have provided detailed understanding of defect nucleation, propagation and interaction events during elastic strain relaxation in Gex Si1-x/Si(100) epitaxy and have allowed quantitative measurement of physical parameters such as activation energies which describe these processes.
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Hull, R., Bean, J.C., Bahnck, D., Bonar, J.M., Buescher, C. (1989). In-Situ Electron Microscope Studies of Misfit Dislocation Introduction into GexSi1-x/Si Heterostructures. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_28
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DOI: https://doi.org/10.1007/978-1-4613-0527-9_28
Publisher Name: Springer, Boston, MA
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