In-Situ Electron Microscope Studies of Misfit Dislocation Introduction into GexSi1-x/Si Heterostructures

  • R. Hull
  • J. C. Bean
  • D. Bahnck
  • J. M. Bonar
  • C. Buescher
Conference paper
Part of the NATO ASI Series book series (NSSB, volume 203)


An outstanding question in semiconductor strained layer epitaxy is the details of lattice mismatch relaxation via the introduction, propagation and interaction of misfit dislocations. In this paper, we review present understanding of the strained layer relaxation process and describe recent in-situ relaxation experiments in a transmission electron microscope which, to our knowledge, have enabled us for the first time to directly observe misfit dislocation phenomena in strained layer semiconductors in realtime. These experiments have provided detailed understanding of defect nucleation, propagation and interaction events during elastic strain relaxation in Gex Si1-x/Si(100) epitaxy and have allowed quantitative measurement of physical parameters such as activation energies which describe these processes.


Critical Thickness Misfit Dislocation Strain Relaxation Thread Dislocation Density Plan View Transmission Electron Microscope 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • R. Hull
    • 1
  • J. C. Bean
    • 1
  • D. Bahnck
    • 1
  • J. M. Bonar
    • 1
  • C. Buescher
    • 1
  1. 1.AT&T Bell LaboratoriesMurray HillUSA

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