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Defect Structure in Low and High Misfit Systems

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Evaluation of Advanced Semiconductor Materials by Electron Microscopy

Part of the book series: NATO ASI Series ((NSSB,volume 203))

Abstract

One of the most important concerns in semiconductor heteroepitaxy is the formation of dislocations and similar defects as a result of misfit stresses. In general these defects are harmful to the electronic/optonic properties of the material and the primary interest is to avoid the defects; where not possible, as an alternative, mechanisms are to be found that reduce the defect density or the presence of defects should be restricted to areas, where they may be tolerated. Unfortunately, the mechanisms that operate to nucleate, multiply and propagate dislocations depend in many cases on the heteroepitaxial system under consideration; especially the degree of misfit, growth temperature and growth mechanism may influence the motion of dislocations and thus the defect structure that develops in the system.

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Author information

Authors and Affiliations

  1. Technical University Hamburg-Harburg, D-2100, Hamburg 90, Germany

    Horst P. Strunk

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  1. Horst P. Strunk
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Editor information

Editors and Affiliations

  1. University of Bristol, Bristol, UK

    David Cherns

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© 1989 Plenum Press, New York

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Strunk, H.P. (1989). Defect Structure in Low and High Misfit Systems. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_27

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  • DOI: https://doi.org/10.1007/978-1-4613-0527-9_27

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-7850-4

  • Online ISBN: 978-1-4613-0527-9

  • eBook Packages: Springer Book Archive

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