Abstract
Problems associated with the interpretation of conventional electron diffraction images from Gex, Si1-x/Si strained layer superlattice structures (SLS) and relaxation of the strain field of a SLS by dislocation generation and dislocation filtering mechanisms are reviewed. Surface relaxation in cross-sectional TEM samples is modelled using a Fourier series solution and good agreement is found between experimental and computed diffraction contrast images for a single layer structure. Methods to handle the extension to a multiperiod SLS structure are suggested. In a 40-period SLS of relatively low Ge fraction (x= 0.17), loss of coherency is typically observed on annealing at the first Gex, Si1-x/Si interface. For higher Ge concentrations (x= 0.25) loss of coherency occurs at several Gex, Si1-x/Si interfaces in the superlattice. The use of SLS as dislocation “filters” is briefly reviewed and the limitations of this approach to obtaining low dislocation density epitaxial films are considered.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
R. People, IEEE J. Quant. Electron., QE22, 1696 (1986).
J.C. Bean, L.C. Feldman, A.T. Fiory, S. Nakahara and I.K. Robinson, J. Vac. Sci. Technol., A2, 436 (1984).
S. Luryi, A. Katalsky and J.C. Bean, IEEE Trans. Electron Devices, ED31, 1135 (1984).
H. Daemokes, H.J. Herzog, H. Jorke, H. Kibbel and E. Kasper, IEEE Trans Electron Devices, ED33, 633 (1986).
H.C. Liu, D. Landheer, M. Buchanan and D.C. Houghton, Appl. Phys. Lett., 52, 1809 (1988).
E. Suhir, Mat. Res. Soc. Symp. Proc., 91, 73 (1987).
S. Luryi and E. Suhir, Appl. Phys. Lett., 49, 3 (1986).
S.P. Timoshenko and J.N. Goodier, Theory of Elasticity, 3rd ed., New York, McGraw-Hill (1970).
J.M. Gibson and M.M.J. Treacy, Ultramicroscopy, 14, 345 (1984).
J.M. Gibson, R. Hull, J.C. Bean and M.M.J. Treacy, Appl. Phys. Lett., 46, 649 (1985).
P.B. Hirsch, A. Howie, R.B. Nicholson, D.W. Pashley and M.J. Whelan, Electron Microscopy of Thin Crystals, Florida, R.E. Kreiger (1977).
G.C. Weatherly, D.D. Perovic and D.C. Houghton, Inst. Phys. Conf. Ser., 87, 237, (Proceedings of Microsc. Semicond. Mater. Conf., Oxford, 6–8 April, 1987).
A.K. Head, P. Humble, L.M. Clareborough, A.J. Morton and C.T. Forwood, Computed Electron Micrographs and Defect Identification, Amsterdam, North Holland (1973).
D.D. Perovic, Transmission Electron Microscopy of Elastic Relaxation Effects in Ge x Si 1-x Strained Layer Superlattices, M. A.Sc.Thesis, University of Toronto (1988).
R. Hull, J.C. Bean, F. Cerdeira, A.T. Fiory and J.M. Gibson, Appl. Phys. Lett., 48, 56 (1986).
R.M. Chrenko, L.J. Schowalter, E.L. Hall and N. Lewis, Mat. Res. Soc. Symp. Proc., 56, 27 (1986).
A. De Veirman, K. Yallup, J.Van Landuyt, H.E. Maes and S. Amelinckx, Inst. Phys. Conf. Ser., 87, 403, (Proceedings of Microsc. Semicond. Mater. Conf., Oxford, 6–8 April, 1987).
P. Pirouz, C.M. Chorey, T.T. Chang and J.A. Powell, Inst. Phys. Conf. Ser., 87, 175, (Proceedings of Microsc. Semicond. Mater. Conf., Oxford, 6–8 April, 1987).
J.H. van der Merwe and C.A.B. Ball, in Epitaxial Growth, edited by J.W. Matthews, Academic Press, New York, Part B, Chap. 6 (1975).
J.W. Matthews, ibid, Part B, Chap.8 (1975).
R. People and J.C. Bean, Appl. Phys. Lett., 47, 32 (1985); Erratum.
R. People and J.C. Bean, Appl. Phys. Lett., Erratum, 49, 229 (1986).
P.M.J. Maree, J.C. Barbour, J.F. van der Veen, K.L. Kavanagh, C.W.T. Bielle-Lieuwna and M.P.A. Vegrs, J. Appl. Phys., 62, 4413 (1987).
D.J. Lockwood and J.-M. Baribeau, Can. J. Phys., in press (1988).
J.-M. Baribeau, S. Kechang and K. Munro, submitted to Appl Phys. Lett. (1988).
J.W. Matthews and A.E. Blakeslee, J. Cryst. Growth, 27, 118 (1974).
J.W. Matthews, A.E. Blakeslee and S. Mader, Thin Solid Films, 33, 253 (1976).
J.W. Matthews and A.E. Blakeslee, J. Cryst. Growth, 32, 235 (1976).
J.-M. Baribeau, T.E Jackman, D.C. Houghton, P. Maigne and M.W. Denhoff, J. Appl. Phys., 63, 5738 (1988).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1989 Plenum Press, New York
About this paper
Cite this paper
Perovic, D.D., Weatherly, G.C., Houghton, D.C. (1989). Electron Microscopy of Gex, Si1-x/Si Strained Layer Superlattices. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_26
Download citation
DOI: https://doi.org/10.1007/978-1-4613-0527-9_26
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-7850-4
Online ISBN: 978-1-4613-0527-9
eBook Packages: Springer Book Archive