The Microstructure of GaAs/Si Films Studies as a Function of Heat Treatment

  • A. Rocher
  • H. Heral
  • M. N. Charasse
  • A. Georgakilas
  • J. Chazelas
  • J. P. Hirtz
  • H. Blanck
  • J. Siejka
Conference paper
Part of the NATO ASI Series book series (NSSB, volume 203)


The effect of heat treatments applied to a 400 nm GaAs layer grown by MBE on a (001) silicon substrate is discussed. These heat treatments have been applied during or after the growth of the GaAs, in order to improve the quality of the layer. A substantial improvement of the crystalline quality, measured by RBS, is observed. The density of threading dislocations decreases after heat treatments. Specimens have been also studied by TEM. X-TEM observations show an interface roughness of about 1.5 nm and both 60° and Lomer interfacial dislocations are seen. Misfit dislocation networks attain a limited size. Threading dislocations are often located at the limit of these dislocation networks.


Dislocation Density Rapid Thermal Annealing Bright Field Image Crystalline Quality Misfit Dislocation 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • A. Rocher
  • H. Heral
    • 1
  • M. N. Charasse
  • A. Georgakilas
  • J. Chazelas
  • J. P. Hirtz
    • 2
  • H. Blanck
    • 3
  • J. Siejka
    • 4
  1. 1.Laboratoire d’Optique Electronique du CNRS-29ToulouseFrance
  2. 2.Thomson-CSF/LCR - Domaine de CorbevilleOrsayFrance
  3. 3.Thomson-SC/DAG - Domaine de CorbevilleOrsayFrance
  4. 4.G.P.S./E.N.S.Université Paris VII Tour 23ParisFrance

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