The Microstructure of GaAs/Si Films Studies as a Function of Heat Treatment
The effect of heat treatments applied to a 400 nm GaAs layer grown by MBE on a (001) silicon substrate is discussed. These heat treatments have been applied during or after the growth of the GaAs, in order to improve the quality of the layer. A substantial improvement of the crystalline quality, measured by RBS, is observed. The density of threading dislocations decreases after heat treatments. Specimens have been also studied by TEM. X-TEM observations show an interface roughness of about 1.5 nm and both 60° and Lomer interfacial dislocations are seen. Misfit dislocation networks attain a limited size. Threading dislocations are often located at the limit of these dislocation networks.
KeywordsDislocation Density Rapid Thermal Annealing Bright Field Image Crystalline Quality Misfit Dislocation
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- /2/.Z.LILIENTAL-WEBER, E.R.WEBER, J.WASHBURN, T.Y.LIU and H.KROEMER, NATO Advenced Research Workshop Heterostructure on Si. Cargese, France (1988).Google Scholar
- /10/.J.NARAYAN, S.SHARAN, A.R.SRIVATSA and A.S.NANDEDKAR, Mat. Sci. and Eng., B1, 105, (1988).Google Scholar