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Dislocation Generation and Elimination in GaAs on Si

  • P. D. Augustus
  • P. Kightley
  • R. R. Bradley
  • R. J. M. Griffiths
Conference paper
Part of the NATO ASI Series book series (NSSB, volume 203)

Abstract

Transmission Electron Microscopy is shown to be the key analytical technique in assessing the crystalline quality of thin epitaxial layers of GaAs on Si. Its use is demonstrated in assessing initial nucleation conditions, dislocation introduction and elimination and to show the benefit of strained layer superlattices in dislocation reduction.

Keywords

Epitaxial Layer Misfit Dislocation Moire Fringe Strained Layer Superlattices Selective Area Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    H B Kroemer. Proc. Mater Res Soc 67 (1986) 3.CrossRefGoogle Scholar
  2. [2]
    D J Eaglesham, R Devenish, R T Fan, C J Humphreys, H Morkoc, R R Bradley and P D Augustus. Inst Phys Conf Ser 87 (1987) 105.Google Scholar
  3. [3]
    T Soga, S Hattori, S Sakai, M Takeyasu, M Umeno. J Appl Phys 57 (1985) 4578.CrossRefGoogle Scholar
  4. [4]
    S J Pearton, C R Abernathy, R Caruso, S M Vernon, K Short, J M Brown, S N G Ohu, M Stavola and V E Haven. J Appl Phys 63 (1988) 775CrossRefGoogle Scholar
  5. [5]
    W Kern and D A Puotinen, RCA Review June (1970) 187.Google Scholar
  6. [6]
    D J Eaglesham, private communication.Google Scholar
  7. [7]
    N Otsuko, C Choi, Y Nakamura, S Nagakura, R Fischer, C K Peng and H Morkoc. Appl Phys Lett 49 (1986) 277.CrossRefGoogle Scholar
  8. [8]
    D J Eaglesham, E P Kvam, D M Maher, C J Humphreys, G S Green, B K Tanner, J C Bean. Appl Phys Lett 53 (1988) 2083.CrossRefGoogle Scholar
  9. [9]
    B W Dodson, C J Humphreys, G S Green, B K Tanner and J C Bean. App Phys Lett 53 (1988) 2083.CrossRefGoogle Scholar
  10. [10]
    HP Lee, S Wang, Y-H Huang and P Yu. App Phys Lett 52 (1988) 215.CrossRefGoogle Scholar
  11. [11]
    P D Hodson, P Kightley, R C Goodfellow, T B Joyce, J R Riffat, R R Bradley and R J M Griffiths. Semicond Sci Technol 3 (1988) 715.CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • P. D. Augustus
    • 1
  • P. Kightley
    • 1
  • R. R. Bradley
    • 1
  • R. J. M. Griffiths
    • 1
  1. 1.Plessey Research Caswell LtdCaswell, Towcester, NorthantsUK

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