Dislocation Generation and Elimination in GaAs on Si

  • P. D. Augustus
  • P. Kightley
  • R. R. Bradley
  • R. J. M. Griffiths
Conference paper
Part of the NATO ASI Series book series (NSSB, volume 203)


Transmission Electron Microscopy is shown to be the key analytical technique in assessing the crystalline quality of thin epitaxial layers of GaAs on Si. Its use is demonstrated in assessing initial nucleation conditions, dislocation introduction and elimination and to show the benefit of strained layer superlattices in dislocation reduction.


Epitaxial Layer Misfit Dislocation Moire Fringe Strained Layer Superlattices Selective Area Growth 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • P. D. Augustus
    • 1
  • P. Kightley
    • 1
  • R. R. Bradley
    • 1
  • R. J. M. Griffiths
    • 1
  1. 1.Plessey Research Caswell LtdCaswell, Towcester, NorthantsUK

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