Abstract
The growth by molecular beam epitaxy of III-V layers with reduced thickness permits the synthesis of new materials. The optical and electrical properties of these structures are strongly related to the roughness of the hetero-interfaces, the chemical composition and the accurate thickness of the layers. Electron microscopy is a direct way to get local information. Despite its rather limited resolution power, SEM is quite commonly used. Routine TEM applications are limited due to the time consuming nature of the thin foils preparation process and the artefacts associated. Our observations on cleaved samples demonstrate that Wedge Transmission Electron Microscopy (WTEM) and Reflection Electron Microscopy (REM) offer some unique advantages on the previous methods in terms of specimen preparation, layer thickness determination, estimation of interface abruptness, chemical composition information and parallelism of the epilayers.
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© 1989 Plenum Press, New York
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Buffat, PA., Ganière, JD., Stadelmann, P. (1989). Transmission and Reflection Electron Microscopy on Cleaved Edges of III-V Multilayered Structures. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_23
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DOI: https://doi.org/10.1007/978-1-4613-0527-9_23
Publisher Name: Springer, Boston, MA
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