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Transmission Electron Microscopy of In-Situ Deposited Films on Silicon

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Book cover Evaluation of Advanced Semiconductor Materials by Electron Microscopy

Part of the book series: NATO ASI Series ((NSSB,volume 203))

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Abstract

We discuss applications of an ultra-high vacuum TEM to the study of clean Si surfaces and in-situ deposited films. For the Nisi2 on Si system, we show the importance of metastable phases during growth. For native oxidation of Si, the behavior of individual atomic steps is viewed. In summary, moderate resolution TEM and diffraction is shown to have a great deal to contribute to semiconductor surface science primarily because of the kinematical diffraction by monolayers and the penetration to view sub-surface phenomena.

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Author information

Authors and Affiliations

  1. AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ, 07974, USA

    J. M. Gibson

  2. Dept. of Materials Science and Engineering, The University Liverpool, England

    J. L. Batstone

  3. Dunster House, Harvard University, Cambridge, MA, 02138, USA

    M. Y. Lanzerotti

Authors
  1. J. M. Gibson
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  2. J. L. Batstone
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  3. M. Y. Lanzerotti
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Editor information

Editors and Affiliations

  1. University of Bristol, Bristol, UK

    David Cherns

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© 1989 Plenum Press, New York

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Gibson, J.M., Batstone, J.L., Lanzerotti, M.Y. (1989). Transmission Electron Microscopy of In-Situ Deposited Films on Silicon. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_21

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  • DOI: https://doi.org/10.1007/978-1-4613-0527-9_21

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-7850-4

  • Online ISBN: 978-1-4613-0527-9

  • eBook Packages: Springer Book Archive

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