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Transmission Electron Microscopy of In-Situ Deposited Films on Silicon

  • J. M. Gibson
  • J. L. Batstone
  • M. Y. Lanzerotti
Conference paper
Part of the NATO ASI Series book series (NSSB, volume 203)

Abstract

We discuss applications of an ultra-high vacuum TEM to the study of clean Si surfaces and in-situ deposited films. For the Nisi2 on Si system, we show the importance of metastable phases during growth. For native oxidation of Si, the behavior of individual atomic steps is viewed. In summary, moderate resolution TEM and diffraction is shown to have a great deal to contribute to semiconductor surface science primarily because of the kinematical diffraction by monolayers and the penetration to view sub-surface phenomena.

Keywords

Step Spacing Transmission Electron Microscope Technique Single Crystal Film Step Distribution Surface Science Technique 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • J. M. Gibson
    • 1
  • J. L. Batstone
    • 2
  • M. Y. Lanzerotti
    • 3
  1. 1.AT&T Bell LaboratoriesMurray HillUSA
  2. 2.Dept. of Materials Science and EngineeringThe University LiverpoolEngland
  3. 3.Dunster HouseHarvard UniversityCambridgeUSA

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