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Evaluation of Advanced Semiconductor Materials by Electron Microscopy pp 217–232Cite as

TEM and STEM Observations of Composition Variations in III-V Semiconductors

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Part of the book series: NATO ASI Series ((NSSB,volume 203))

Abstract

In first approximation, the quaternary AxBl-xCyD1-y III-V semiconducting alloys have the same sphalerite structure1 as their ‘constituent binaries’ AC, AD, BC and BD; their lattice parameter a and their band gap energy vary continuously with the compositions x and y. These materials are thus attractive for the fabrication of optoelectronic devices, because a suitable choice of these in principle independent compositions usually allows both the epitaxy of a thin alloy layer on a bulk binary substrate and the subsequent obtaining of a device emitting or detecting light at a given wavelength. Conversely, any inhomogeneity in the alloy is likely to induce local variations of its structural and electronic properties. Such composition variations are either introduced intentionally to obtain novel effects, for instance in superlattices, or unintentionally. In the latter case, they are often caused by changes in the growth conditions of the layer: this may happen in Liquid Phase Epitaxy (LPE) when the liquid bath changes composition as growth proceeds, or in Chemical Vapor Deposition2, because of instabilities in the growth process; the composition then varies only in the growth direction.

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Authors and Affiliations

  1. Centre National d´Etudes des Télécommunications, 196, avenue Henri Ravéra, 92220, Bagneux, France

    Frank Glas

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  1. Frank Glas
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Editors and Affiliations

  1. University of Bristol, Bristol, UK

    David Cherns

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© 1989 Plenum Press, New York

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Glas, F. (1989). TEM and STEM Observations of Composition Variations in III-V Semiconductors. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_16

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  • DOI: https://doi.org/10.1007/978-1-4613-0527-9_16

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-7850-4

  • Online ISBN: 978-1-4613-0527-9

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