Strains and Misfit Dislocations at Interfaces

  • C. J. Humphreys
  • D. J. Eaglesham
  • D. M. Maher
  • H. L. Fraser
  • I. Salisbury
Part of the NATO ASI Series book series (NSSB, volume 203)


In recent years there have been great advances in the heteroepitaxial growth of nonlattice- matched epilayers and strained-layer superlattices (SLSs). The role of lattice strain in these structures is extremely important. Not only does strain exert a large influence on band gaps, band offsets, effective masses and mobilities, but strain can be used deliberately to “fine-tune” these device properties. Hence it is essential to be able to measure local strains in order to understand and quantify the physical properties of the material. In this paper we will illustrate the use of Convergent Beam Electron Diffraction (CBED) for the measurement of local strain, and we will describe the use of a new technique, Convergent Beam Imaging (CBIM), for detecting, mapping and measuring small crystalline distortions.


Burger Vector Epitaxial Layer Orthogonal Array Critical Thickness Misfit Dislocation 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • C. J. Humphreys
    • 1
  • D. J. Eaglesham
    • 1
  • D. M. Maher
    • 2
  • H. L. Fraser
    • 3
  • I. Salisbury
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of LiverpoolLiverpoolEngland
  2. 2.AT&T Bell LaboratoriesMurray HillUSA
  3. 3.Department of Materials Science and EngineeringUniversity of IllinoisUrbanaUSA

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