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Epitaxial NiSi2 and CoSi2 Interfaces

  • R. T. Tung
  • A. F. J. Levi
  • F. Schrey
  • M. Anzlowar
Part of the NATO ASI Series book series (NSSB, volume 203)

Abstract

Epitaxial NiSi2 and CoSi2 have attracted much scientific and technological attention in recent years. Scientifically, epitaxial silicide interfaces are the only single crystal metal-semiconductor interfaces that are available. They are ideal material systems for the study of Schottky barrier height (SBH). Technologically, epitaxial metal-semiconductor structures may be an important part of the next generation vertical integration of microelectronic devices. Also, the long electron mean free path of CoSi2 has rekindled people’s interest in ballistic transistors. Work in epitaxial silicide began more than a decade ago. Early works involved growth of epitaxial silicides with conventional Si processing techniques such as e-beam evaporation and furnace annealing.[1] [2] [3] Much improved results were obtained more recently in studies involving growth under ultrahigh vacuum (UHV) conditions.[4] [5] [6] [7] [8] [9] [10] [11] [12] The epitaxial NiSi2/Si and CoSi2/Si interfaces have very high structural perfection. These two cubic disilicides have the fluorite lattice structure and good lattice matching with silicon, with mismatches of -0.4% and -1.2% respectively. On Si(111), two epitaxial orientations are possible. Type A silicide has the same orientation as the silicon substrate; type B silicide shares the surface normal <111> axis with Si, but is rotated 180° about this axis with respect to the Si.[13]

Keywords

Schottky Barrier Height High Resolution Electron Microscopy Weak Beam Silicide Layer Solid Phase Epitaxy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • R. T. Tung
    • 1
  • A. F. J. Levi
    • 1
  • F. Schrey
    • 1
  • M. Anzlowar
    • 1
  1. 1.AT&T Bell LaboratoriesMurray HillUSA

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