Abstract
Luminescence spectroscopy is a singularly powerful technique for characterising semiconductor materials. For high quality materials great sensitivity exists to trace impurities and in the case of quantum wells luminescence spectra give a very clear indication of the quality of the structures which have been grown.
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© 1989 Plenum Press, New York
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Steeds, J.W., Bailey, S.J., Wang, J.N., Tu, C.W. (1989). TEM-Cathodoluminescence Study of Single and Multiple Quantum Wells of MBE Grown GaAs/AlGaAs. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_10
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DOI: https://doi.org/10.1007/978-1-4613-0527-9_10
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