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HREM of Edge-on Interfaces and Defects

  • Rob W. Glaisher
  • J. C. Barry
  • David J. Smith
Part of the NATO ASI Series book series (NSSB, volume 203)

Abstract

The latest generation of intermediate-voltage high-resolution electron microscopes (HREMs) offer the exciting prospect of resolution limits of 2Å or better [1,2]. Moreover, under certain well-defined conditions, it is even possible to deduce useful structural details down to small fractions of this limit [3–5], and some limited chemical information can also be extracted. In this paper, the potentialities and limitations of the high-resolution technique will be considered, with particular reference to edge-on interfaces and defects in various elemental and compound semiconductors. Specific examples described include: i the identification of crystal polarity in <110>-orientated sphalerite materials; ii intensity variations across <100> GaAs/Ga1-xAlxAs interfaces; iii stacking fault symmetry and dislocations; iv refinement of the diamond <100> platelet defect; v distinguishing shuffle and glide models for the Si 30° partial dislocation. Prospects and practical problems associated with the HREM technique, as it applies to imaging semiconductors, are briefly discussed.

Keywords

Compound Semiconductor Partial Dislocation Image Simulation Sphalerite Structure Crystal Polarity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Rob W. Glaisher
    • 1
  • J. C. Barry
    • 1
  • David J. Smith
    • 1
    • 2
  1. 1.Center for Solid State ScienceArizona State UniversityTempeUSA
  2. 2.Department of PhysicsArizona State UniversityTempeUSA

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