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Evaluation of Advanced Semiconductor Materials by Electron Microscopy pp 1–17Cite as

HREM of Edge-on Interfaces and Defects

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Part of the book series: NATO ASI Series ((NSSB,volume 203))

Abstract

The latest generation of intermediate-voltage high-resolution electron microscopes (HREMs) offer the exciting prospect of resolution limits of 2Å or better [1,2]. Moreover, under certain well-defined conditions, it is even possible to deduce useful structural details down to small fractions of this limit [3–5], and some limited chemical information can also be extracted. In this paper, the potentialities and limitations of the high-resolution technique will be considered, with particular reference to edge-on interfaces and defects in various elemental and compound semiconductors. Specific examples described include: i the identification of crystal polarity in <110>-orientated sphalerite materials; ii intensity variations across <100> GaAs/Ga1-xAlxAs interfaces; iii stacking fault symmetry and dislocations; iv refinement of the diamond <100> platelet defect; v distinguishing shuffle and glide models for the Si 30° partial dislocation. Prospects and practical problems associated with the HREM technique, as it applies to imaging semiconductors, are briefly discussed.

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Author information

Authors and Affiliations

  1. Center for Solid State Science, Arizona State University, Tempe, Arizona, 85287, USA

    Rob W. Glaisher, J. C. Barry & David J. Smith

  2. Department of Physics, Arizona State University, Tempe, Arizona, 85287, USA

    David J. Smith

Authors
  1. Rob W. Glaisher
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  2. J. C. Barry
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  3. David J. Smith
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Editor information

Editors and Affiliations

  1. University of Bristol, Bristol, UK

    David Cherns

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© 1989 Plenum Press, New York

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Glaisher, R.W., Barry, J.C., Smith, D.J. (1989). HREM of Edge-on Interfaces and Defects. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_1

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  • DOI: https://doi.org/10.1007/978-1-4613-0527-9_1

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-7850-4

  • Online ISBN: 978-1-4613-0527-9

  • eBook Packages: Springer Book Archive

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