HREM of Edge-on Interfaces and Defects

  • Rob W. Glaisher
  • J. C. Barry
  • David J. Smith
Part of the NATO ASI Series book series (NSSB, volume 203)


The latest generation of intermediate-voltage high-resolution electron microscopes (HREMs) offer the exciting prospect of resolution limits of 2Å or better [1,2]. Moreover, under certain well-defined conditions, it is even possible to deduce useful structural details down to small fractions of this limit [3–5], and some limited chemical information can also be extracted. In this paper, the potentialities and limitations of the high-resolution technique will be considered, with particular reference to edge-on interfaces and defects in various elemental and compound semiconductors. Specific examples described include: i the identification of crystal polarity in <110>-orientated sphalerite materials; ii intensity variations across <100> GaAs/Ga1-xAlxAs interfaces; iii stacking fault symmetry and dislocations; iv refinement of the diamond <100> platelet defect; v distinguishing shuffle and glide models for the Si 30° partial dislocation. Prospects and practical problems associated with the HREM technique, as it applies to imaging semiconductors, are briefly discussed.


Compound Semiconductor Partial Dislocation Image Simulation Sphalerite Structure Crystal Polarity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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  1. [1]
    Cowley, J.M. and Smith, D.J., 1987, Acta Cryst., A43:737.Google Scholar
  2. [2]
    Smith, D.J., 1988, J. Electr. Micro. Techn., in press.Google Scholar
  3. [3]
    Wood, G.J., Stobbs, W.M. and Smith, D.J., 1984, Phil. Mag. A50:375.Google Scholar
  4. [4]
    Stobbs, W.M., Wood, G.J. and Smith, D.J., 1984, Ultramicroscopy 14:145.CrossRefGoogle Scholar
  5. [5]
    Saxton, W.O. and Smith, D.J., 1985, Ultramicroscopy 18:39.CrossRefGoogle Scholar
  6. [6]
    Hetherington, C.J.D., Barry, J.C., Bi, J.M., Humphreys, C.J., Grange, J., Wood, C., 1985, Mater. Res. Soc. Symp. Proc. 37:41.Google Scholar
  7. [7]
    Gjonnes, J. and Moodie, A.F., 1965, Acta Cryst. 19:65.CrossRefGoogle Scholar
  8. [8]
    Glaisher, R.W., Spargo, A.E. and Smith, D.J., 1989, Ultramicroscopy, in press.Google Scholar
  9. [9]
    Bourret, A., Desseaux, J. and Renault, A., 1975, Acta Cryst. A31:746.Google Scholar
  10. [10]
    Glaisher, R.W., Spargo, A.E. and Smith, D.J., 1989, Ultramicroscopy, in press.Google Scholar
  11. [11]
    Smith, D.J., Glaisher, R.W. and Lu, P., 1989, Phil. Mag. Letts., in press.Google Scholar
  12. [12]
    O’Keefe, M.A. and Pitt, A.J., 1980, in Electron Microscopy 1980 (ed. P. Brederoo and G. Boom) Vol. 1:122.Google Scholar
  13. [13]
    Glaisher, R.W. and Spargo, A.E.C., 1985, Ultramicroscopy, 18:323.CrossRefGoogle Scholar
  14. [14]
    Wright, A.C., Ng, T.L. and Williams, J.O., 1988, Phil. Mag. Letts. 57:107.CrossRefGoogle Scholar
  15. [15]
    Smith, D.J., Bursill, L.A. and Wood, G.J., 1984, Ultramicroscopy, 16:19.CrossRefGoogle Scholar
  16. [16]
    Glaisher, R.W., to be published.Google Scholar
  17. [17]
    Smith, D.J., Saxton, W.O., O’Keefe, M.A., Wood, G.J. and Stobbs, W.M., 1983, Ultramicroscopy, 11:263.CrossRefGoogle Scholar
  18. [18]
    Olsen, A. and Spence, J.C.H., 1981, Phil. Mag. A43:945.Google Scholar
  19. [19]
    Hornstra, J., 1958, Phys. Chem. Solids, 5:129.CrossRefGoogle Scholar
  20. [20]
    Bourret, A., Desseaux, J. and D’Anterroches, C., 1981, Inst. Phys. Conf. Ser., 60:9.Google Scholar
  21. [21]
    Anstis, G.R., Hirsch, P.B., Humphreys, C.J., Hutchison, J.L. and Ourmazd, A., 1981, Inst. Phys. Conf. Ser., 60:23.Google Scholar
  22. [22]
    Barry, J.C. and Alexander, H., 1987, in Proc. 45th Ann. Meet. EMSA (ed. G.W. Bailey, San Francisco Press, San Francisco) pp. 242–243.Google Scholar
  23. [23]
    Raman, C.V. and Nilakantan, P., 1940, Proc. Indian Acad. Sci., All:389.Google Scholar
  24. [24]
    Barry, J.C., Bursill, L.A. and Hutchison, J.L., 1985, Phil. Mag., A51:15.Google Scholar
  25. [25]
    Humble, P., Lynch, D.F. and Olsen, A., 1985, Phil. Mag., A52:623.Google Scholar
  26. [26]
    Barry, J.C., 1986, in Proc. Xlth Int. Cong, on Electron Microscopy, Kyoto, pp. 799–800.Google Scholar
  27. [27]
    Kilaas, R. and Gronsky, R., 1985, Ultramicroscopy 16:193.CrossRefGoogle Scholar
  28. [28]
    Gibson, J.M. and McDonald, M.L., 1987, Mater. Res. Soc. Symp. Proc.82:109.CrossRefGoogle Scholar
  29. [29]
    Ponce, F.A., Suzuki, Kobayashi, H., Ishibashi, Y., Ishida, Y. and Eto, T., 1986, in Proc. 44th Ann. Meet. EMSA (ed. G.W. Bailey, San Francisco) pp. 606–609.Google Scholar
  30. [30]
    Petford-Long, A.K. and Smith, D.J., 1986, Phil. Mag. A54:837.Google Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Rob W. Glaisher
    • 1
  • J. C. Barry
    • 1
  • David J. Smith
    • 1
    • 2
  1. 1.Center for Solid State ScienceArizona State UniversityTempeUSA
  2. 2.Department of PhysicsArizona State UniversityTempeUSA

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