Abstract
The metal-oxide-semiconductor (MOS) system is by far the most important device structure used in both large scale integration (LSI) and very large scale integration (VLSI) technologies. The present LSI and VLSI digital circuits are based almost entirely on n-channel MOSFETs and complementary MOSFETs (CMOSFETs). The MOS structure is a basic building block for several key integrated-circuit active components, namely, MOS field-effect transistors (MOSFETs), insulated-gate field-effect transistors (IGFETs), and charge-coupled devices (CCDs). Most commerically available MOSFETs and CCDs are fabricated from the Si-SiO2 system. Therefore, it is pertinent to devote this chapter to discussing silicon-based MOS capacitors, MOSFETs and CCDs. The FETs fabricated from III–V compound semiconductors will be depicted in Chapter 15.
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© 1993 Plenum Press, New York
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Li, S.S. (1993). Metal—Oxide—Semiconductor Field-Effect Transistors. In: Semiconductor Physical Electronics. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0489-0_14
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DOI: https://doi.org/10.1007/978-1-4613-0489-0_14
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