Abstract
The performance of semiconductor lasers can degrade during their operation. This degradation is usually characterized by an increase in the threshold current that is often accompanied by a decrease in the external differential quantum efficiency. The dominant mechanism responsible for this degradation is determined by one or several of the fabrication processes including epitaxy, device processing, and bonding. In addition, the degradation rate of lasers processed from a given wafer depends on the operating conditions, namely, the operating temperature and injection current. Although many of the degradation mechanisms are not fully understood, an extensive amount of empirical observations exists in the literature. These observations have allowed the fabrication of InGaAsP laser diodes with an extrapolated median lifetime in excess of 25 years1 at an operating temperature of 10°C.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Nash, F. R., W. J. Sundburg, R. L. Hartman, J. R. Pawlik, D. A. Ackerman, N. K. Dutta, and R. W. Dixon. AT&T Tech. J. 64, 809 (1985).
The reliability requirements of a submarine lightwave transmission system are discussed in a special issue of AT&T Tech. J. 64, 3 (1985).
DeLoach, B. C., Jr., B. W. Hakki, R. L. Hartman, and L. A. D’Asaro. Proc. IEEE 61, 1042 (1973).
Petroff, P. M., and R. L. Hartman. Appl. Phys. Lett. 23, 469 (1973).
Johnston, W. D., and B. I. Miller. Appl. Phys. Lett. 23, 1972 (1973).
Petroff, P. M., W. D. Johnston Jr., and R. L. Hartman. Appl. Phys. Lett. 25, 226 (1974).
Matsui, J., R. Ishida, and Y. Nannichi. Jpn. J. Appl. Phys. 14, 1555 (1975).
Casey, H. C., and M. B. Panish, Chap. 8 in Heterostructure Lasers. New York: Academic Press, 1978.
Kressel, H., and J. K. Butler. Semiconductor Lasers and Heterojunction LEDs. New York: Academic Press, 1977.
Petroff, P. M., and D. V. Lang. Appl. Phys. Lett. 31, 60 (1977).
Ueda, O., I. Umebu, S. Yamakoshi, and T. Kotani. J. Appl. Phys. 53, 2991 (1982).
Ueda, O., S. Yamakoshi, S. Komiya, K. Akita, and T. Yamaoka. Appl. Phys. Lett. 36, 300 (1980).
Yamakoshi, S., M. Abe, O. Wada, S. Komiya, and T. Sakurai. IEEE J. Quantum Electron. QE-17, 167 (1981).
Temkin, H., C. L. Zipfel, and V. G. Keramidas. J. Appl. Phys. 52, 5377 (1981).
Johnston, W. D., Jr., G. Y. Epps, R. E. Nahory, and M. A. Pollack. Appl. Phys. Lett. 33, 992 (1978)
Johnston, W. D., Chap. 7 in GaInAsP Alloy Semiconductors, ed. T. P. Pearsall. New York: John Wiley & Sons, 1982.
Mahajan, S., W. D. Johnston Jr., M. A. Pollack, and R. E. Nahory. Appl. Phys. Lett. 34, 717 (1979).
Ueda, O., S. Yamakoshi, S. Komiya, and T. Kotani, Proc. Defects and Radiation Effects in Semiconductors, Ser. no. 59, Institute of Physics, Bristol, 1981.
A. K. Chin, in Scanning Electron Microscopy, Vol. III, p. 1069. Chicago: SEM Inc., 1982.
Mahajan, S., A. K. Chin, C. L. Zipfel, D. Brasen, B. H. Chin, R. T. Tung, and S. Nakahara. Mater. Lett. 2, 184(1984).
Chin, A. K., C. L. Zipfel, M. Geva, I. Camlibel, P. Skeath, and B. H. Chin. Appl. Phys. Lett. 45, 37 (1984).
Fukuda, M., K. Wakita, and G. Iwane. J. Appl. Phys. 54, 1246 (1983).
Yamakoshi, S., M. Abe, S. Komiya, and Y. Toyamer. Proc. Int. Electron. Dev. meeting, p. 122 (1979).
Temkin, H., A. Mahajan, M. A. DiGiuseppe, and A. G. Dentai. Appl. Phys. Lett. 40, 562 (1982).
Ueda, O., H. Imai, A. Yamaguchi, S. Komiya, I. Umebu, and T. Kotani. J. Appl. Phys. 55, 665 (1984).
Shaw, D. A., and P. R. Thornton. Solid-State Electron. 13, 919 (1970).
Kressel, H., and H. Mierop. J. Appl. Phys. 38, 5419 (1967).
E. J. Flynn (personal communication).
Mizuishi, K., M. Sawai, S. Todoroki, S. Tsuji, M. Hirao, and M. Nakamura. IEEE J. Quantum Electron. QE-19, 1294 (1983).
Gordon, E. I., F. R. Nash, and R. L. Hartman. IEEE Electron Device Lett. ELD-4, 465 (1983).
Ikagami, T., K. Takahei, M. Fukuda, and K. Kuroiwa. Electron. Lett. 19, 282 (1983).
Hakki, B. W., P. E. Fraley, and T. F. Eltringham. AT&T Tech. J. 64, 771 (1985).
Hartman, R. L., and R. W. Dixon. Appl. Phys. Lett. 26, 239 (1975).
Joyce, W. B., K. Y. Liou, F. R. Nash, P. R. Bossard, and R. L. Hartman. AT&T Tech. J. 64, 717 (1985).
Mizuishi, K., M. Hirao, S. Tsuji, H. Sato, and M. Nakamura. Jpn. J. Appl. Phys. Part 1 21, 359 (1982).
Runge, P. K., and P. R. Trischitta. J. Lightwave Technol. LT-2, 744 (1984).
Fukuda, M. Reliability and degradation of semiconductor lasers and LEDs. Norwood, MA: Artech House, 1991.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1993 AT&T
About this chapter
Cite this chapter
Agrawal, G.P., Dutta, N.K. (1993). Degradation and Reliability. In: Semiconductor Lasers. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0481-4_14
Download citation
DOI: https://doi.org/10.1007/978-1-4613-0481-4_14
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-7579-4
Online ISBN: 978-1-4613-0481-4
eBook Packages: Springer Book Archive