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Hot-Carrier Noise under Degenerate Conditions

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Hot Carriers in Semiconductors

Abstract

Degeneracy plays an important role in most electronic devices when regions with high carrier concentration exist and/or low temperatures are considered. After the seminal paper of Bosi and Jacoboni1, several authors2–4 have investigated degeneracy effects by using the Monte Carlo (MC) technique. While most of the interest has been addressed to study average quantities, to our knowledge electronic noise has never been considered. Therefore, it is the aim of this paper to analyze some interesting effects associated with the many-body character of degeneracy on noise in the presence of an external electric field of arbitrary strength. As interesting feature, we remind that because of degeneracy no simple relation (e.g. Price’s relationship5) exists between noise and diffusion. Thus, modeling of noise under degenerate conditions cannot relate on the knowledge of diffusion, and its determination rests on the calculation of the correspondent current (or voltage) correlation function.

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References

  1. S. Bosi and C. Jacoboni, J. Phys. C: Solid-State Phys. 9, 315 (1976).

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  2. P. Lugli and D.K. Ferry, IEEE Trans. Electron Dev., ED-32, 2431 (1985).

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  3. M.V. Fischetti and S.E. Laux, Phys. Rev B38, 9721 (1988).

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  4. N.S. Mansour, K. Diff and K.F. Brennan, J. Appl. Phys. 70, 6854 (1991).

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  5. P.J. Price: in “Fluctuation Phenomena in Solids”, Ed. by R.E. Burgess (Academic Press, New York, 1965 ) p. 355.

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  6. L. Varani and L. Reggiani, Rivista Nuovo Cimento 17, 1 (1994).

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  7. L. Varani, Proc. 13th Int Conf. on Noise in Physical Systems and 1/f Fluctuations, Eds. V. Bareikis and R. Katilius, World Scientific (Singapore, 1995) p. 203.

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© 1996 Plenum Press, New York

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Tadyszak, P., Cappy, A., Danneville, F., Reggiani, L., Varani, L., Rota, L. (1996). Hot-Carrier Noise under Degenerate Conditions. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_94

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  • DOI: https://doi.org/10.1007/978-1-4613-0401-2_94

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-8035-1

  • Online ISBN: 978-1-4613-0401-2

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