Abstract
Degeneracy plays an important role in most electronic devices when regions with high carrier concentration exist and/or low temperatures are considered. After the seminal paper of Bosi and Jacoboni1, several authors2–4 have investigated degeneracy effects by using the Monte Carlo (MC) technique. While most of the interest has been addressed to study average quantities, to our knowledge electronic noise has never been considered. Therefore, it is the aim of this paper to analyze some interesting effects associated with the many-body character of degeneracy on noise in the presence of an external electric field of arbitrary strength. As interesting feature, we remind that because of degeneracy no simple relation (e.g. Price’s relationship5) exists between noise and diffusion. Thus, modeling of noise under degenerate conditions cannot relate on the knowledge of diffusion, and its determination rests on the calculation of the correspondent current (or voltage) correlation function.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
S. Bosi and C. Jacoboni, J. Phys. C: Solid-State Phys. 9, 315 (1976).
P. Lugli and D.K. Ferry, IEEE Trans. Electron Dev., ED-32, 2431 (1985).
M.V. Fischetti and S.E. Laux, Phys. Rev B38, 9721 (1988).
N.S. Mansour, K. Diff and K.F. Brennan, J. Appl. Phys. 70, 6854 (1991).
P.J. Price: in “Fluctuation Phenomena in Solids”, Ed. by R.E. Burgess (Academic Press, New York, 1965 ) p. 355.
L. Varani and L. Reggiani, Rivista Nuovo Cimento 17, 1 (1994).
L. Varani, Proc. 13th Int Conf. on Noise in Physical Systems and 1/f Fluctuations, Eds. V. Bareikis and R. Katilius, World Scientific (Singapore, 1995) p. 203.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1996 Plenum Press, New York
About this chapter
Cite this chapter
Tadyszak, P., Cappy, A., Danneville, F., Reggiani, L., Varani, L., Rota, L. (1996). Hot-Carrier Noise under Degenerate Conditions. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_94
Download citation
DOI: https://doi.org/10.1007/978-1-4613-0401-2_94
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-8035-1
Online ISBN: 978-1-4613-0401-2
eBook Packages: Springer Book Archive