Abstract
A knowlege of intra- and intersubband electron-phonon scattering rates in quantum wells is central to the understanding and manipulation of hot carrier dynamics in nanostructures. A significant amount of both experimental and theoretical work has been reported on this issue, but variations over two orders of magnitude exist in the measured scattering rates. Our purpose here is to provide a joint experimental and theoretical investigation which avoids many of the problems and clarifies many of the inconsistencies encountered by previous reports.
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© 1996 Plenum Press, New York
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Turner, K., Rota, L., Taylor, R.A., Ryan, J.F. (1996). Ultrafast Optical Absorption Measurments of Electron-Phonon Scattering in GaAs Quantum Wells. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_6
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DOI: https://doi.org/10.1007/978-1-4613-0401-2_6
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