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Ballistic Electron Current in System of Asymmetrical Double Quantum Wells and its Terahertz Oscillations

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Hot Carriers in Semiconductors

Abstract

In this paper a ballistic transport of current carriers with special dispersion relation ε(px) across a thin doped base of the n + nn + or p+pp+ - diode is considered (px is a component of crystal momentum p in the current direction). A distinguished feature of the ε(px)- relation consists in the presence of some region in the p- space where effective mass of the carriers ( 2 ε /px 2y)-1 is negative. Among possible mechanisms of realization of the required dispersion relation we turn attention to such of them which can be described by matrix Hamiltonian: H 11 = ε(1) (p), H 22 = ε (2)(p), H12 = H21=δ,

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REFERENCES

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© 1996 Plenum Press, New York

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Vagidov, N.Z., Gribnikov, Z.S., Korshak, A.N. (1996). Ballistic Electron Current in System of Asymmetrical Double Quantum Wells and its Terahertz Oscillations. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_43

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  • DOI: https://doi.org/10.1007/978-1-4613-0401-2_43

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-8035-1

  • Online ISBN: 978-1-4613-0401-2

  • eBook Packages: Springer Book Archive

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