Skip to main content

Temperature Dependence of Photoluminescence in InGaAsP/InP Strained MQW Heterostructures

  • Chapter

Abstract

Multiple quantum well (MQW) InGaAsP/InP heterostructure systems have been drawn considerable research interest in recent years due to its suitability for long wavelength optoelectronic devices1. The performance of such devices is strongly affected by peculiarities of recombination processes in the quantum wells2 (QW).

This is a preview of subscription content, log in via an institution.

Buying options

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD   54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

References

  1. B.W. Takasaki, J.S. Preston, J.D. Evans, and J.G.Simmons, Can. J. Phys. 70, 1017 (1992)

    Article  ADS  Google Scholar 

  2. A.M. Fox, D.A.B. Miller, G. Livesku, J.E.Cunningham, and W.Y.Jan, IEEE J. Quantum Electron 27(10), 2281(1991)

    Google Scholar 

  3. H. Schneider and K. V. Klitzing, Phys. Rev. B 38(9), 6160 (1988)

    Article  ADS  Google Scholar 

  4. S. Adachi, J.Appl.Phys 53(12), 8775(1982)

    Google Scholar 

  5. H. Temkin, D. Gershoni, and M.B. Panish, Optical properties of GalnAs/InP quantum wells, in“Epitaxial Microstructures,” A.C. Gossard, ed., Academic Press, New York, (1994)

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1996 Plenum Press, New York

About this chapter

Cite this chapter

Raisky, O.Y., Wang, W.B., Alfano, R.R., Reynolds, C.L., Swaminathan, V. (1996). Temperature Dependence of Photoluminescence in InGaAsP/InP Strained MQW Heterostructures. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_3

Download citation

  • DOI: https://doi.org/10.1007/978-1-4613-0401-2_3

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-8035-1

  • Online ISBN: 978-1-4613-0401-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics