Abstract
Multiple quantum well (MQW) InGaAsP/InP heterostructure systems have been drawn considerable research interest in recent years due to its suitability for long wavelength optoelectronic devices1. The performance of such devices is strongly affected by peculiarities of recombination processes in the quantum wells2 (QW).
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© 1996 Plenum Press, New York
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Raisky, O.Y., Wang, W.B., Alfano, R.R., Reynolds, C.L., Swaminathan, V. (1996). Temperature Dependence of Photoluminescence in InGaAsP/InP Strained MQW Heterostructures. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_3
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DOI: https://doi.org/10.1007/978-1-4613-0401-2_3
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