Phonon Oscillations in a Spectrum of Reversible Bleaching of Gallium Arsenide under Interband Absorption of a High-Power Picosecond Light Pulse
This text describes the results of studies with picosecond resolution of the optical transparency T spectra of a thin layer of a high-purity GaAs exposed to a high-power light pulse having the photon energy ħωex, which is somewhat larger than die forbidden gap width Eg. Experiments were carried out at room temperature. The duration of both the exciting and probing pulses was about 14 ps.
KeywordsGallium Arsenide GaAs Layer Versus Figure Conduction Band Bottom Interband Absorption
Unable to display preview. Download preview PDF.