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Nonequilibrium Electron — Hole Plasmas under Crossed Electric and Magnetic Fields and Stimulated Landau Emission of n-InSb at the Quantum Limit

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Hot Carriers in Semiconductors

Abstract

In quantizing high magnetic fields, highly nonequilibrium electron-hole plasmas can be excited in bulk n-InSb samples at low temperatures, when a constant dc current \(\hat x\) is passed through the sample across the magnetic field H (∥ ẑ), resulting in stimulated interband Landau emission, as shown in Fig. 1.1–3

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References

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© 1996 Plenum Press, New York

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Morimoto, T., Chiba, M., Kido, G. (1996). Nonequilibrium Electron — Hole Plasmas under Crossed Electric and Magnetic Fields and Stimulated Landau Emission of n-InSb at the Quantum Limit. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_143

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  • DOI: https://doi.org/10.1007/978-1-4613-0401-2_143

  • Publisher Name: Springer, Boston, MA

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