Carrier and Photon Dynamics in InAlGaAs/InP MQW Laser Structures: Influence of Carrier Transport on High-Frequency Modulation
Ultrafast semiconductor laser devices are key components for advanced lightwave transmission systems. Presently, for the third telecommunication window close to 1.55μm mainly InGaAsP/InP distributed feedback (DFB) lasers are investigated and applied. Due to larger technological difficulties, the alternative InAlGaAs/InP material system was by far less studied and used1–8, although this system seems to be superior in many physical points such as band gap discontinuities, carrier quantum well (QW) tunneling, thermal carrier re-emission from QWs, differential gain, gain compression and compositional refractive index variation. We performed detailed experimental and theoretical studies of the carrier and photon dynamics in MQW InAlGaAs/InP laser structures focussing on the influence of carrier transport.
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