Low Temperature Anti-Stokes Luminescence in CdTe/(Cd,Mg)Te Quantum Well Structures
Over the last decades, anti-Stokes photoluminescence (ASPL), i.e., emission that occurs at a wavelength shorter than the wavelength of the excitation source, has been studied in a variety of systems, such as atoms and molecules1, polymers2 and amorphous semiconductors3. The main issue addressed in these studies was the identification of the underlying microscopic mechanisms as, e.g., multi-photon processes, Auger recombination or thermal excitation. In the case of crystalline bulk semiconductors and semiconductor heterostructures ASPL excited by a coherent two-photon absorption process, using photon energies well below the optical band-gap is a well known phenomenon4. The radiation then exhibits a superlinear dependence on excitation intensity. Recently, however, ASPL from an asymmetric double quantum well (QW) showing a linear intensity dependence has been reported5 and was attributed to a dipole-dipole transfer.
KeywordsRecombination Helium Sapphire Auger
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