Low Temperature Anti-Stokes Luminescence in CdTe/(Cd,Mg)Te Quantum Well Structures

  • R. Hellmann
  • A. Euteneur
  • S. G. Hense
  • J. Feldmann
  • P. Thomas
  • E. O. Göbel
  • A. Waag
  • G. Landwehr

Abstract

Over the last decades, anti-Stokes photoluminescence (ASPL), i.e., emission that occurs at a wavelength shorter than the wavelength of the excitation source, has been studied in a variety of systems, such as atoms and molecules1, polymers2 and amorphous semiconductors3. The main issue addressed in these studies was the identification of the underlying microscopic mechanisms as, e.g., multi-photon processes, Auger recombination or thermal excitation. In the case of crystalline bulk semiconductors and semiconductor heterostructures ASPL excited by a coherent two-photon absorption process, using photon energies well below the optical band-gap is a well known phenomenon4. The radiation then exhibits a superlinear dependence on excitation intensity. Recently, however, ASPL from an asymmetric double quantum well (QW) showing a linear intensity dependence has been reported5 and was attributed to a dipole-dipole transfer.

Keywords

Recombination Helium Sapphire Auger 

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References

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    see, e.g., R. Cingolani, and K. Ploog, in: Advances in Physics 40, 535 (1992); and references thereinGoogle Scholar
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    A. Tomita et al Int. Coni on Quantum Electronics, Technical Digest 9: 102 (1992)Google Scholar
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    R. Hellmann et al., Phys. Rev. B 51: 18053 (1995)ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1996

Authors and Affiliations

  • R. Hellmann
    • 1
  • A. Euteneur
    • 1
  • S. G. Hense
    • 1
  • J. Feldmann
    • 1
  • P. Thomas
    • 1
  • E. O. Göbel
    • 1
    • 3
  • A. Waag
    • 2
  • G. Landwehr
    • 2
  1. 1.Fachbereich Physik and Zentrum für MaterialwissenschaftenPhilipps-UniversitätMarburgGermany
  2. 2.Physikal. InstitutUniversität WürzburgWürzburgGermany
  3. 3.Physikalisch Technische BundesanstaltBraunschweigGermany

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