Advertisement

Low Temperature Anti-Stokes Luminescence in CdTe/(Cd,Mg)Te Quantum Well Structures

  • R. Hellmann
  • A. Euteneur
  • S. G. Hense
  • J. Feldmann
  • P. Thomas
  • E. O. Göbel
  • A. Waag
  • G. Landwehr

Abstract

Over the last decades, anti-Stokes photoluminescence (ASPL), i.e., emission that occurs at a wavelength shorter than the wavelength of the excitation source, has been studied in a variety of systems, such as atoms and molecules1, polymers2 and amorphous semiconductors3. The main issue addressed in these studies was the identification of the underlying microscopic mechanisms as, e.g., multi-photon processes, Auger recombination or thermal excitation. In the case of crystalline bulk semiconductors and semiconductor heterostructures ASPL excited by a coherent two-photon absorption process, using photon energies well below the optical band-gap is a well known phenomenon4. The radiation then exhibits a superlinear dependence on excitation intensity. Recently, however, ASPL from an asymmetric double quantum well (QW) showing a linear intensity dependence has been reported5 and was attributed to a dipole-dipole transfer.

Keywords

Quantum Well Auger Recombination Multiple Quantum Well Quantum Well State Superlinear Dependence 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    see, e.g., Y.R Shen, The Principles of Nonlinear Optics, John Wiley & Sons, New York, (1984)Google Scholar
  2. [2]
    Z.G. Soos, andR.G. Kepler, Phys. Rev. B 43: 11908 (1992)Google Scholar
  3. [3]
    S.Q. Gu, M.E. Raikh, and P. C. Taylor, Phys. Rev. Lett. 69: 2697 (1992)ADSCrossRefGoogle Scholar
  4. [4]
    see, e.g., R. Cingolani, and K. Ploog, in: Advances in Physics 40, 535 (1992); and references thereinGoogle Scholar
  5. [5]
    A. Tomita et al Int. Coni on Quantum Electronics, Technical Digest 9: 102 (1992)Google Scholar
  6. [6]
    R. Hellmann et al., Phys. Rev. B 51: 18053 (1995)ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1996

Authors and Affiliations

  • R. Hellmann
    • 1
  • A. Euteneur
    • 1
  • S. G. Hense
    • 1
  • J. Feldmann
    • 1
  • P. Thomas
    • 1
  • E. O. Göbel
    • 1
    • 3
  • A. Waag
    • 2
  • G. Landwehr
    • 2
  1. 1.Fachbereich Physik and Zentrum für MaterialwissenschaftenPhilipps-UniversitätMarburgGermany
  2. 2.Physikal. InstitutUniversität WürzburgWürzburgGermany
  3. 3.Physikalisch Technische BundesanstaltBraunschweigGermany

Personalised recommendations