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Monte Carlo Simulation of Mbe Growth of GaAs Analysis of Rheed

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Stability of Materials

Part of the book series: NATO ASI Series ((NSSB,volume 355))

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Abstract

Modern optoelectronic devices such as quantum well lasers contain thin layers (20-100 Å) of different semiconductor materials. Mostly one uses III-V compound semiconductors for example GaAs, AlGaAs, InP, InGaAs etc. These structures are grown using MOCVD, MBE or CBE growth technologies1. All these techniques have in common that one operates under a large excess of group V elements, which serves to stabilize the surface.

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Author information

Authors and Affiliations

  1. Physics Dpt. Eindhoven University of Technology, Eindhoven, Netherlands

    P. J. van Hall, M. R. Leys & M. Bosch

  2. Physics Dpt. Middle East Technical University, Ankara, Turkey

    H. Kökten

Authors
  1. P. J. van Hall
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  2. H. Kökten
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  3. M. R. Leys
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  4. M. Bosch
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Editor information

Editors and Affiliations

  1. Lawrence Livermore National Laboratory, Livermore, California, USA

    A. Gonis  & P. E. A. Turchi  & 

  2. Czech Academy of Sciences, Praha, Czech Republic

    Josef Kudrnovský

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© 1996 Plenum Press, New York

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van Hall, P.J., Kökten, H., Leys, M.R., Bosch, M. (1996). Monte Carlo Simulation of Mbe Growth of GaAs Analysis of Rheed. In: Gonis, A., Turchi, P.E.A., Kudrnovský, J. (eds) Stability of Materials. NATO ASI Series, vol 355. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0385-5_16

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  • DOI: https://doi.org/10.1007/978-1-4613-0385-5_16

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-8028-3

  • Online ISBN: 978-1-4613-0385-5

  • eBook Packages: Springer Book Archive

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