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Nongated, undesirable thyristor triggering

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Thyristor Physics

Part of the book series: Applied Physics and Engineering ((APPLIED PHYS,volume 12))

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Summary

A thyristor can be turned on not only by the application of the gate current, but also by such mechanisms as the thermal effect carrier generation by radiation, or the application of rapidly rising and/or very high forward potential. The thermal effect and the dv/dt effects are undesirable in thyristors. Light irradiation, if so desired, may be utilized in light-activated switches.

The best technique to improve thyristor capability from the operating temperature and dv/dt point of view is to use the so-called “shorted” emitter which bypasses the thermal and displacement currents and makes the device less sensitive to these effects.

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References

  1. F. E. Gentry. Recent advances in p-n-p-n devices. IEEE Conf. Paper 63–430, January 1963.

    Google Scholar 

  2. A. K. Jonscher. Notes on the theory of four-layer semiconductor switches. Solid State Electron., 2: 143–148, 1961.

    Article  ADS  Google Scholar 

  3. V. A. Kuz’min. Theory of the dv/dt effect in thyristors. In Physics of the p-n Junctions and Semiconductor Devices. (S. M. Ryokin and Y. V. Shmartsev, eds.). London: Consultants Bureau, 1971.

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  4. I. Somos. Switching characteristic of silicon power-controlled rectifiers. AIEE Trans., 83: 861–871, 1964.

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  5. F. E. Gentry, F. W. Gutzwiller, N. Holonyak, and E. E. Von Zastrow. Semiconductor Controlled Rectifiers. Englewood Cliffs, N.J.: Prentice-Hall, 1969.

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  6. T. C. McNulty. A review of thyristor characteristics and applications. Thyristor, RCA Application Note, AN-4242.

    Google Scholar 

  7. F. E. Gentry, R. E. Scace, and J. K. Flowers. Bidirectional triode p-n-p-n switches. Proc. IEEE, 53: 355–369, 1965.

    Article  Google Scholar 

  8. P. S. Raderecht. A review of the “shorted emitter” principle as applied to p-n-p-n silicon controlled rectifiers. Int. J. Electron., 31 (6): 541–564, 1971.

    Article  Google Scholar 

  9. C. D. Root. Negative current bias and resistance bias for preventing turn-on by dv/dt of controlled rectifiers. Proc. IEEE, 51: 1672, 1963.

    Article  Google Scholar 

  10. C.K. Chu. Geometry of thyristor cathode shunts. IEEE Trans. Electron Devices, ED-17 (9): 687–690, 1970.

    Article  Google Scholar 

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© 1976 Springer-Verlag New York Inc.

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Blicher, A. (1976). Nongated, undesirable thyristor triggering. In: Thyristor Physics. Applied Physics and Engineering, vol 12. Springer, New York, NY. https://doi.org/10.1007/978-1-4612-9877-9_6

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  • DOI: https://doi.org/10.1007/978-1-4612-9877-9_6

  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4612-9879-3

  • Online ISBN: 978-1-4612-9877-9

  • eBook Packages: Springer Book Archive

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