Summary
The maximum forward- and reverse-voltage-blocking capability of power thyristors are dependent on the small-signal current gains of the p-n-p and n-p-n transistor sections, on the junction type, and on silicon resistivity.
For small values of current gains, the maximum forward- and reverse-blocking potentials are equal. In the shorted cathode emitter case, both the maximum forward breakover point and maximum reverse-blocking voltage are determined by the condition, α1 = 1/M, which states that the breakdown occurs when the small-signal common base current gain of the idealized symmetrical p-n-p thyristor section is equal to the reciprocal of the avalanche-multiplication factor M. This relationship permits the approximate computation of the maximum blocking capability since the multiplication factor and current gain are known voltage functions.
Improved breakover and/or other characteristics can be obtained in the reverse conducting thyristor (RCT) in which both the cathode and anode emitters have shorted regions.
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© 1976 Springer-Verlag New York Inc.
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Blicher, A. (1976). Thyristor maximum voltage-blocking capability. In: Thyristor Physics. Applied Physics and Engineering, vol 12. Springer, New York, NY. https://doi.org/10.1007/978-1-4612-9877-9_3
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DOI: https://doi.org/10.1007/978-1-4612-9877-9_3
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