Summary
Planar junctions are much easier to passivate and to protect from external contaminants than are etched mesa devices. They compare unfavorably, however, with the mesa-type structures from the breakdown voltage point of view if special designs which include guard rings, field-limiting rings, or field plates are not used. When they are used, though, planar-junction breakdowns as good or better than those of mesa devices can be achieved.
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© 1976 Springer-Verlag New York Inc.
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Blicher, A. (1976). Planar-junction avalanche breakdown improvement. In: Thyristor Physics. Applied Physics and Engineering, vol 12. Springer, New York, NY. https://doi.org/10.1007/978-1-4612-9877-9_15
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DOI: https://doi.org/10.1007/978-1-4612-9877-9_15
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