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Device basics

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Book cover Thyristor Physics

Part of the book series: Applied Physics and Engineering ((APPLIED PHYS,volume 12))

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Summary

Thyristors are three-terminal solid-state switches whose bistable state depends on a regenerative feedback mechanism occuring in a p-n-p-n structure.

The silicon-controlled rectifier (SCR) is a device belonging to the class of thyristors with the ability of unidirectional conduction. After defining the switching and holding points of an SCR, the gate turn-on conditions are examined, and it is shown that the V–I coordinates of the switching point are dependent on small-signal current gains of the p-n-p and n-p-n SCR sections. The turn-on occurs when the sum of small-signal alphas is equal to unity.

In the case of a shorted emitter, the turn-on condition is simplified to a product of small-signal current gain and avalanche multiplication factor 1= 1.

At zero potential applied to the center junction the current flowing through the device is I v and at this current level the sum of DC alphas αN and αP is equal to unity.

The holding current I h is greater than I 1 and, therefore, the V–I coordinates of the holding point are dependent on the sum of DC alphas.

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References

  1. W. Fulop. Three terminal measurements of current amplification factors of controlled rectifiers. IEEE Trans. Electron Devices, 10: 120–135, 1963.

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  2. F. E. Gentry. Turn on criteria for pnpn devices. IEEE Trans. Electron Devices, ED-11: 74, 1964.

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  3. J. F. Gibbons. A critique of the theory of pnpn devices. IEEE Trans. Electron Devices, ED-11: 406–413, 1969

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  4. J. F. Gibbons. and Graphical analysis of the I-V characteristics of generalized pnpn devices. Proc. IEEE, 55 (8): 1366–1374, 1967.

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  5. R. W. Aldrich and N. Holonyak, Jr. Two-terminal asymmetrical and symmetrical silicon negative resistance switches. J. Appl. Phys., 30: 1819–1824, 1959.

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  6. F. E. Gentry, F. W. Gutzwiller, N. Holonyak, Jr., and E. E. Von Zastrow. Semiconductor Controlled Rectifiers. Englewood Cliffs, N.J.: Prentice-Hall, 1964.

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Also of interest

  • W. Fulop, W. Fong Yan, M. R. Joadat-Ghasabi, and C. A. Hogarth. Three-terminal current gain measurements of high-power thyristors. Int. J. Electron., 33 (6): 601–609, 1972.

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© 1976 Springer-Verlag New York Inc.

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Blicher, A. (1976). Device basics. In: Thyristor Physics. Applied Physics and Engineering, vol 12. Springer, New York, NY. https://doi.org/10.1007/978-1-4612-9877-9_1

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  • DOI: https://doi.org/10.1007/978-1-4612-9877-9_1

  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4612-9879-3

  • Online ISBN: 978-1-4612-9877-9

  • eBook Packages: Springer Book Archive

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