Abstract
The growth of an epitaxial semiconductor layer on an insulating substrate (or vice versa) will in general lead to the development of strain in the composite structure because of lattice mismatch between the two substances or because of differential thermal contraction between the two layers. The strain may or may not be relieved, in whole or in part, by introduction of strain-or misfit-relieving dislocations, or cracks.
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Blanc, J. (1978). Misfit, Strain, and Dislocations in Epitaxial Structures: Si/Si, Ge/Si, Si/Al2O3 . In: Cullen, G.W., Wang, C.C. (eds) Heteroepitaxial Semiconductors for Electronic Devices. Springer, New York, NY. https://doi.org/10.1007/978-1-4612-6267-1_8
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DOI: https://doi.org/10.1007/978-1-4612-6267-1_8
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