Abstract
A tutorial introduction is given to the theory of spatio-and temporal dynamics of optically excited semiconductors on ultrashort time and space scales. The derivation of the equations of motion for the electromagnetic field and the material current is presented and relevant approximation schemes are derived. A hierarchy of model equations is discussed which contain transport of light and electronic excitations. The theory is applied to several experimentally relevant situations.
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We use throughout the paper parameters close to bulk GaAs (binding energy 4.2meV, d cv = 3eÅ). For the spatial excitation of wave packets the assumption is made that hole and electron mass is equal.
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Knorr, A., Koch, S.W. (1998). Microscopic Modelling of the Nonlinear Optical Properties of Semiconductors. In: Moloney, J.V. (eds) Nonlinear Optical Materials. The IMA Volumes in Mathematics and its Applications, vol 101. Springer, New York, NY. https://doi.org/10.1007/978-1-4612-1714-5_6
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DOI: https://doi.org/10.1007/978-1-4612-1714-5_6
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