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Fabrication of Atomically Controlled Nanostructures and Their Device Application

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Nanotechnology

Abstract

During the last three decades, we have witnessed remarkable progress in the entire spectrum of semiconductor technology. In the area of epitaxy, for example, the emergence of molecular beam epitaxy (MBE) and organo-metallic vapor phase epitaxy (OMVPE) has allowed us to prepare quantum wells, tunneling barriers, and other ultra-thin layered structures, such as shown in Figures 1(a) and (b). In these structures, semiconductor films of specified thicknesses and compositions are deposited with the accuracy of one atomic layer (˜0.3 nm). Artificial potential profiles V(z) created in such structures are used to control the quantum-mechanical motion of electrons, providing a variety of electronic properties which are important both in solid-state physics and in advanced device applica-tions[l-6]. Figure 2 illustrates several examples of such potentials. Indeed, these layered structures are now used as the core parts of high-performance devices, such as quantum well lasers, Stark modulators, quantum-well infrared detectors, high electron mobility transistors, and resonant tunneling diodes.

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Authors and Affiliations

  1. University of Tokyo (RCAST), 4-6-1 Komaba, Meguro-ku, Tokyo, Japan

    H. Sakaki

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  1. Bell Laboratories, Lucent Technologies, Murray Hill, NJ, 07974-0636, USA

    Gregory Timp

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Sakaki, H. (1999). Fabrication of Atomically Controlled Nanostructures and Their Device Application. In: Timp, G. (eds) Nanotechnology. Springer, New York, NY. https://doi.org/10.1007/978-1-4612-0531-9_5

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