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FBARs Utilizing Induced Piezoelectric Effect

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Tuneable Film Bulk Acoustic Wave Resonators

Abstract

This chapter is devoted to the theoretical description of tuning of FBARs based on materials with induced piezoelectric effect. Though DC field–induced piezoelectric ity occurs in any centrosymmetric material, only ferroelectrics display an effect that is strong enough to be of interest for practical applications. This chapter is essentially based on the paper by (Noeth et al. 2008). However, apart from the incipient ferroelectrics (regular ferroelectric in the paraelectric phase), ferroelectrics in ferroelectric phase are also considered.

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References

  • Gururaja TR, Shurland A, Chen J (1997) Medical ultrasonic transducers with switchable frequency bands centered about f0 and 2f0. IEEE Ultrasonics symposium, pp 1659–1662

    Google Scholar 

  • Hlinka J, Marton P (2006) Phenomenological model of a 90 degrees domain wall in BaTiO3-type ferroelectrics. Phys Rev B 74:104104

    Article  Google Scholar 

  • Kozyrev A, Mikhailov A, Ptashnik S (2010) Switchable FBAR based on paraelectric state FE films. EuMC

    Google Scholar 

  • Larson JD, Mishin S, Bader S (2010) Characterization of reversed c-axis AlN thin films. IEEE Ultrasonics symposium, pp 1054–1059

    Google Scholar 

  • Kvasov A, Tagantsev AK (2012) arXiv: 1204.0097

    Google Scholar 

  • Noeth A, Yamada T, Tagantsev AK et al (2008) Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films. J Appl Phys 104:094102–094110

    Article  Google Scholar 

  • Tagantsev AK (2008) Landau expansion for ferroelectrics: which variable to use? Ferroelectrics 375:19–27

    Article  Google Scholar 

  • Tagantsev AK, Cross LE, Fousek J (2010) Domains in ferroic crystals and thin films. Springer, New York

    Book  Google Scholar 

  • Vaks VG (1968) Phase transitions of displacement type in ferroelectrics. Sov Phys JETP-USSR 27:486

    Google Scholar 

  • Vendik IB, Turalchuk PA, Vendik OG et al (2008) Modeling tuneable bulk acoustic resonators based on induced piezoelectric effect in BaTiO3 and Ba0.25Sr0.75TiO3 films. J Appl Phys 103:014107

    Article  Google Scholar 

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Correspondence to Spartak Gevorgian .

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Gevorgian, S., Tagantsev, A.K., Vorobiev, A. (2013). FBARs Utilizing Induced Piezoelectric Effect. In: Tuneable Film Bulk Acoustic Wave Resonators. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/978-1-4471-4944-6_5

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  • DOI: https://doi.org/10.1007/978-1-4471-4944-6_5

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  • Publisher Name: Springer, London

  • Print ISBN: 978-1-4471-4943-9

  • Online ISBN: 978-1-4471-4944-6

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