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Huang Diffuse Scattering from Small Planar Dislocation Loops

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Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 206))

Abstract

This paper gives out a theoretical framework of electron/X-ray Huang diffuse scattering intensity at the immediate vicinity of Bragg reflection in reciprocal space. Nodal lines of two types in the simulated patterns of Huang diffuse scattering intensity are discussed in connection with a loop shape factor and the Huang diffuse scattering intensity from infinitesimal loops. It is suggested that the Huang diffuse scattering method is supplementary to the conventional TEM amplitude contrast imaging techniques and it has advantages in characterizing the morphology of very small dislocation loop when other methods fail.

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Correspondence to Zhongfu Zhou .

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© 2013 Springer-Verlag London

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Zhou, Z. et al. (2013). Huang Diffuse Scattering from Small Planar Dislocation Loops. In: Du, W. (eds) Informatics and Management Science III. Lecture Notes in Electrical Engineering, vol 206. Springer, London. https://doi.org/10.1007/978-1-4471-4790-9_24

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  • DOI: https://doi.org/10.1007/978-1-4471-4790-9_24

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  • Publisher Name: Springer, London

  • Print ISBN: 978-1-4471-4789-3

  • Online ISBN: 978-1-4471-4790-9

  • eBook Packages: EngineeringEngineering (R0)

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