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Gunn Diode and IMPATT Diode Modelling

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Abstract

Transferred-electron devices (utilizing the bulk negative resistance of gallium arsenide, indium phosphide or related compounds) and avalanche devices that use impact ionization in high electric field — are the most powerful solid-state sources of microwave energy. In this Chapter, we discuss different approaches to modeling these devices. First, we consider the mechanism responsible for the negative differential mobility in GaAs. Then we discuss and compare a full blown self-consistent Monte Carlo simulation of transferred electron devices with a much simpler (but a far less accurate) approach based on the drift-diffusion equation. Then we consider IMPATT devices which use phase delays related to avalanche breakdown and carrier drift in a semiconductor diode and discuss additional problems involved in modeling IMPATT devices.

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Author information

Authors and Affiliations

  1. University of Virginia, USA

    Michael Shur

Authors
  1. Michael Shur
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Editor information

Editors and Affiliations

  1. Microwave Solid State Group, Department of Electronic and Electrical Engineering, University of Leeds, LS2 9JT, Leeds, UK

    Christopher M. Snowden BSc, MSc, PhD, CEng, MIEE, Sen. Mem. IEEE  & Robert E. Miles BSc, ARCS, PhD, CEng, MIEE, MIEEE  & 

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© 1993 Springer-Verlag London Limited

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Shur, M. (1993). Gunn Diode and IMPATT Diode Modelling. In: Snowden, C.M., Miles, R.E. (eds) Compound Semiconductor Device Modelling. Springer, London. https://doi.org/10.1007/978-1-4471-2048-3_5

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  • DOI: https://doi.org/10.1007/978-1-4471-2048-3_5

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-4471-2050-6

  • Online ISBN: 978-1-4471-2048-3

  • eBook Packages: Springer Book Archive

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