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Monte Carlo Models and Simulations

  • Chapter
Compound Semiconductor Device Modelling

Abstract

A critical review of the Monte Carlo (MC) simulation as applied to semiconductor device modeling is presented. The general principles of the method are analized and discussed in detail, together with the physical model implemented for the description of carrier transport in III–V semiconductors. Some special features that can be very useful in dealing with real devices are also examined. It is shown that the MC method is a mature technique for modeling, and can offer great advantages over more traditional approaches. Critical points are pointed out and analyzed. A variety of applications in the field of III–V device modeling is then outlined.

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References

  1. C. Jacoboni, and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation, Springer Verlag, Wien (1989).

    Book  Google Scholar 

  2. C. Jacoboni, and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983).

    Article  Google Scholar 

  3. M.V. Fischetti and S.E. Laux, Phys. Rev. B38, 9721 (1988).

    Google Scholar 

  4. K. Hess, J.P. Lebourton, and U. Ravaioli, Eds., Computational Electronics, Kluver Academic, Norwell, MA (1991).

    Google Scholar 

  5. J. M. Hammersley and D.C. Handscomb, Monte Carlo Methods, Methuen, London (1964).

    Book  MATH  Google Scholar 

  6. Yu. A. Shreider, Ed., The Monte Carlo Method, Pergamon, Oxford 1966.

    MATH  Google Scholar 

  7. Jerome Spanier and Ely M. Gelbard, Monte Carlo Principles and NeutronTransport Problems, Addison-Wesley, Reading (1969).

    Google Scholar 

  8. B.R. Penumalli, in Process and Device Modeling, Ed. W.L. Engl, p. 1, North Holland, Amsterdam (1986).

    Google Scholar 

  9. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer Verlag, Wien (1984).

    Google Scholar 

  10. G. Baccarani, M. Rudan, R. Guerrieri, and P. Ciampolini, in Process and Device Modeling, Ed. W.L. Engl, p. 107, North Holland, Amsterdam (1986).

    Google Scholar 

  11. W. Haensch, The Drift Diffusion Equation and its Applications in MOSFET Modeling, Springer Verlag, Wien (1991).

    Google Scholar 

  12. R.W.Hockney, R.A.Warriner, and M.Reiser, Electron. Letters 10, 484 (1974).

    Article  Google Scholar 

  13. G.Baccarani, CJacoboni, and A.M.Mazzone, Solid State Electr. 20, 5 (1977).

    Article  Google Scholar 

  14. P.Lugli and CJacoboni, in ESSDERC 87, Proc. 17th EuropeanSolid State Device Research Conference, edited by P.U.Calzolari andG.Soncini, p.97 (1987) and references therein.

    Google Scholar 

  15. A Yoshii, and M. Tomizawa, in Process and Device Modeling, Ed. W.L. Engl, p. 195, North Holland, Amsterdam (1986).

    Google Scholar 

  16. M. V. Fischetti and S.E.Laux, IEEE Trans. Electr. Dev. ED38, 650 (1991).

    Article  Google Scholar 

  17. R. Castagne, in High Speed Electronics, Eds. B. Kallback and H. Beneking, Springer Verlag, p. 2 (1986).

    Google Scholar 

  18. R.W. Hockney, and J.W. Eastwood, Computer Simulation using Particles, McGraw-Hill, N. York (1981).

    Google Scholar 

  19. K. Brennan and K. Hess, Phys. Rev. B29, 5581 (1984).

    Article  Google Scholar 

  20. V. Gruzinskis, S. Kersulis, and A. Reklaitis, Semicond. Sci. Technol. 6, 602 (1991).

    Article  Google Scholar 

  21. W. R. Curtice, IEEE Trans. Electr. Dev. ED 29, 1942 (1982).

    Article  Google Scholar 

  22. J.Zimmermann and E.Constant, Solid-State Electron. 23, 915 (1980).

    Article  Google Scholar 

  23. A. Yoshii, M. Tomizawa, and K. Yokoyama, IEEE Trans. Electron Dev. ED30, 1376 (1983).

    Article  Google Scholar 

  24. Y. Awano, K. Tomizawa, and N. Hashizume, IEEE Trans. Electron Dev. ED 31, 448 (1984).

    Article  Google Scholar 

  25. C. Moglestue, COMPEL 1, 7 (1982).

    Google Scholar 

  26. M. Tomizawa, A Yoshii, and K. Yokoyama, IEEE Electron Dev. Lett. EDL 6, 332 (1985).

    Article  Google Scholar 

  27. C. Moglestue, IEEE Trans. Computer-Aided Design, CAD-4, 536 (1985)

    Article  Google Scholar 

  28. P.Hesto, J.EPone, and R.Castagne, Appl.Phys.Lett. 40, 405 (1982).

    Article  Google Scholar 

  29. Y. Park, T. Tang, and D.H. Navon, IEEE Trans. Electr. Dev. ED 30, 1110 (1983).

    Article  Google Scholar 

  30. C. Moglestue, IEEE Trans. Computer-Aided Design, CAD-5, 326 (1986).

    Article  Google Scholar 

  31. Y. Park, D. H. Navon, and T. Tang, IEEE Trans. Electron Dev. ED-31, 1724 (1984).

    Article  Google Scholar 

  32. M.A. Littlejohn, R.J. Trew, J.R. Hauser, and J.M. Golio, J. Vac. Sci. Technolog. B1, 449 (1983).

    Article  Google Scholar 

  33. T. Wang, K. Hess, and G.J. Iafrate, J. Appl. Phys. 59, 2125 (1986).

    Article  Google Scholar 

  34. F. Antonelli, and P. Lugli, in Proc. of XVII European Solid State Device Research Conference ESSDERC87, Eds. P. Calzolari and G. Soncini, p. 177, Tecnoprint, Bologna (1987).

    Google Scholar 

  35. K. Brennan, IEEE Trans. Electron. Dev. ED-32, 2197 (1985).

    Article  Google Scholar 

  36. M.V. Fischetti, IEEE Trans. Electr. Dev. ED38, 634 (1991).

    Article  Google Scholar 

  37. K. Yokoyama, M. Tomizawa, A. Yoshii and T. Sudo, IEEE Trans. El.Dev. ED-32, 2008 (1985).

    Article  Google Scholar 

  38. Sanghera, A. Chryssafis and C Moglestue, IEE Proc. 127, 203 (1980).

    Google Scholar 

  39. C.K. Williams, T.H. Glisson, J.R. Hauser, M.A. Littlejohn and M.F. Abusaid, Sol.St.Electron. 28, 1105 (1985).

    Article  Google Scholar 

  40. R. Fauquembergue,M. Pernisek and E. Constant, El.Lett. 18, 670 (1982).

    Article  Google Scholar 

  41. I.C. Kizillyaly and K. Hess, Jap. J. Appl.Phys. 26, 9 (1987).

    Google Scholar 

  42. A.P. Long, P.H. Beton and MJ. Kelly, J. Appl. Phys. 62, 1842 (1989)

    Article  Google Scholar 

  43. T. Wang and K Hess, J. Appl. Phys. 57, 5336 (1985).

    Article  Google Scholar 

  44. R. Fauquembergue, J.L. Thobel, P. Descheerder, M. Pernisek and P. Wolf, Solid-State Electron. 31, 595 (1988).

    Article  Google Scholar 

  45. M. Tomizawa, A. Yoshii and K. Yokoyama, IEEE El.Dev.Lett. EDL 5, 362 (1984).

    Article  Google Scholar 

  46. M. Tomizawa and N. Hashizuma, in Proc. NASECODE IV Conf., p. 98, Ed. J.J. Miller, Boole, Dublin (1985).

    Google Scholar 

  47. U. Ravaioli and D.K. Ferry,Superlattices and Microst. 2, 75 (1986).

    Article  Google Scholar 

  48. U. Ravaioli and D.K. Ferry,Superlattices and Microst. 2, 377 (1986).

    Article  Google Scholar 

  49. U. Ravaioli and D.K. Ferry,in High Speed Electronics, Eds.B. Kallback and H. Beneking, p. 136, Springer, Berlin (1986).

    Chapter  Google Scholar 

  50. U. Ravaioli, and D.K. Ferry, IEEE Trans. Electr. Dev. ED 33, 677 (1986).

    Article  Google Scholar 

  51. M. Mouis, J.F. Pone, P. Hesto and R. Castagne, in Proc. IEEE/Cornell Univ. Conf. on Advanced Concepts on High Speed Semiconductor Devices and circuits”, Ithaca, N.Y. (1985).

    Google Scholar 

  52. R. Castagne, Physica 134B, 55 (1985).

    Google Scholar 

  53. M. Mouis, P. Dolfus, B. Mougel, J.F. Pone and R. Castagne, in High Speed Electronics, Eds. B. Kallback and H. Beneking, p. 35, Springer, Berlin (1986).

    Chapter  Google Scholar 

  54. H. Shichijo and K. Hess, Phys. Rev. B23, 4197 (1981).

    Article  Google Scholar 

  55. K. Throngnumchai, K. Asada, and T. Sugano, IEEE Trans. Electron Dev. ED-33, 1005 (1986).

    Article  Google Scholar 

  56. B. Ricco’, E. Sangiorgi, F. Venturi, and P. Lugli, in Proc. Int Electron Dev. Meeting (IEDM), Los Angeles, Ca, p. 559 (1986).

    Google Scholar 

  57. E. Sangiorgi, B. Ricco’ and F. Venturi, IEEE Trans., Computer-Aided Design, CAD-7, 259 (1988).

    Article  Google Scholar 

  58. F. Venturi, R.K. Smith, E. Sangiorgi, M.R. Pinto and B. Ricco’, in Simulation of Semiconductor Devices and Processes, vol. 3, Eds. G. Baccarani and M. Rudan, Tecnoprint, Bologna (1988).

    Google Scholar 

  59. F. Venturi, E. Sangiorgi, and B. Ricco’, IEEE Trans. Electron. Dev. ED-38, 1895 (1991)

    Article  Google Scholar 

  60. M. Tomizawa, K. Yokoyama and A. Yoshii, IEEE Trans. Computer-Aided Des., CAD-7, 254 (1988).

    Article  Google Scholar 

  61. Y-J. Chan, and D. Pavlidis, IEEE Trans. Electron. Dev. ED-38, 1999 (1991).

    Article  Google Scholar 

  62. I. C. Kizilyalli, M. Artaki, and A. Chandra, IEEE Trans. Electron. Dev. ED-38, 197 (1991)

    Article  Google Scholar 

  63. G.U. Jensen, B. Lund, T.A. Fjeldly, and M. Shur, IEEE Trans. Electron. Dev. ED-38, 840 (1991).

    Article  Google Scholar 

  64. K.W.Kim, H. Tian, and M.A. Littlejohn, IEEE Trans. Electron. Dev. ED-38, 1737 (1991)

    Article  Google Scholar 

  65. J. Hu, D. Pavlidis, and K. Tomizawa, IEEE Trans. Electron. Dev. ED-39, 1273 (1992).

    Article  Google Scholar 

  66. H. Nakayama, M. Tomizawa, and T. Ishibashi, IEEE Trans. Electron. Dev. ED-39, 1558 (1992).

    Article  Google Scholar 

  67. C. Hwang, D. H. Navon, and T. Tang, IEEE Trans. Electron Dev. ED-34, 154 (1987).

    Article  Google Scholar 

  68. S. Bandyopadhyay, M.E. Brown, CM. Maziar, S. Datta, and M.S. Lundstrom, IEEE Trans. Electron Dev. ED-34, 392 (1987).

    Article  Google Scholar 

  69. S. Bosi, and C. Jacoboni, J. Phys. C 9, 315 (1976).

    Article  Google Scholar 

  70. P. Lugli and D.K.Ferry, IEEE Trans. Electron Dev. ED-32, 2431 (1985).

    Article  Google Scholar 

  71. U. Ravaioli, P. Lugli, M. Osman, and D. K. Ferry, IEEE Trans. Electron. Dev. ED 32, 2097 (1985).

    Article  Google Scholar 

  72. M. Heilblum, Solid State Electr. 24, 343 (1981).

    Article  Google Scholar 

  73. A. Di Carlo, P. Lugli, P. Pavan, E. Zanoni, and R. Malik, Microelectronic Eng. 19, 135 (1992)

    Article  Google Scholar 

  74. P.Lugli and D.K.Feiry, Physica B 129, 532 (1985).

    Article  Google Scholar 

  75. P.Lugli and D.K.Ferry, IEEE El.Dev.Lett. EDL6, 25 (1985).

    Article  Google Scholar 

  76. A. Phillips, and P.J. Price, Appl. Phys. Lett. 30, 528 (1977).

    Article  Google Scholar 

  77. Y. Yamada, S. Ikeda, N. Shimojok, in ESSDERC 87, Proc. 17th European Solid State Device Research Conference, edited by P.U.Calzolari and G.Soncini, p. 111 (1987)

    Google Scholar 

  78. D. Liebig, P. Lugli, P. Vogl, M. Claassen, and W. Harth, Microelectronic Eng. 19, 127 (1992)

    Article  Google Scholar 

  79. R. Thoma, H.J. Peifer, W.L. Engl, W. Quade, R. Brunetti, and C. Jacoboni, J. Appl. Phys. 69, 2300 (1991)

    Article  Google Scholar 

  80. J. Bude, K. Hess, and G.J. Iafrate, Phys. Rev. B45, 10958 (1992)

    Google Scholar 

  81. E.O. Kane, Phys. Rev. 159, 624 (1967).

    Article  Google Scholar 

  82. N. Sano, and A. Yoshii, Phys. Rev. B45, 4171 (1992).

    Google Scholar 

  83. E.O. Kane, J. Appl. Phys. 32, 83 (1961).

    Article  MATH  MathSciNet  Google Scholar 

  84. P. Lugli, Microelectronic Eng. 19, 275 (1992)

    Article  Google Scholar 

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Author information

Authors and Affiliations

  1. Universita’ di Roma „Tor Vergata“, Italy

    Paulo Lugli

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  1. Paulo Lugli
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Editor information

Editors and Affiliations

  1. Microwave Solid State Group, Department of Electronic and Electrical Engineering, University of Leeds, LS2 9JT, Leeds, UK

    Christopher M. Snowden BSc, MSc, PhD, CEng, MIEE, Sen. Mem. IEEE  & Robert E. Miles BSc, ARCS, PhD, CEng, MIEE, MIEEE  & 

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© 1993 Springer-Verlag London Limited

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Lugli, P. (1993). Monte Carlo Models and Simulations. In: Snowden, C.M., Miles, R.E. (eds) Compound Semiconductor Device Modelling. Springer, London. https://doi.org/10.1007/978-1-4471-2048-3_11

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  • DOI: https://doi.org/10.1007/978-1-4471-2048-3_11

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-4471-2050-6

  • Online ISBN: 978-1-4471-2048-3

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