Abstract
In physics and electrical engineering one often encounters fluctuating signals generated in electrical devices and circuits. These fluctuating signals are due to random events that modify the number and/or the velocity of carriers. So, at any point r of any device, the current density j fluctuates which induces a fluctuating voltage (or current) at the device electrodes. It should be noted that only these macroscopic current and voltage fluctuations can be measured. To illustrate this, figure (1) shows a DC biased device and AC signals are applied to some electrodes. Let us consider a small volume dV located at point r in the device. The fluctuations of the current density at point r induces voltage (or current density) fluctuations at any point r′ and consequently at the external electrodes. So, the voltage fluctuation at electrode M, resulting from the current density fluctuation at r depends on two factors:
-
the strength of the fluctuation at r (local or microscopic noise source)
-
the device structure between r and M (impedance field).
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Cappy A. et al (1985) Noise modeling in submicrometer gate two dimensional electron gas field effect transistor. IEEE Trans. Electron Devices 32, n° 12 : 2787–2795.
Cappy A. (1988) Noise modeling and measurement techniques. IEEE Trans. MTT 36, n° 1 : 1–10.
Cappy A., Heinrich W. (1989). The high frequency FET noise performance: A new approach IEEE Trans. Electron Devices 36, n° 2 : 403–410.
Edson W.A. (1960) Noise in oscillators. Proc. IRE, Vol. 48 : 1454–1466.
Fukui H. (1979) Optimal noise figure of microwave GaAs MESFET’s. IEEE Trans. Electron, devices, Vol. 26, n° 7 : 1032–1037.
Ghione G. et al (1989). Proc. Int. Elec. Dev. Meeting : 505.
Ghione G. (1990). Proc. ESSDERC 90, Nottingham IOP Publ. Ltd : 225.
Hillbrand H., Russer P. (1976) An efficient method for computer Aided Noise Analysis of linear Amplifier Networks IEEE Trans, on Circuits and Systems, Vol. CAS 23, n° 4 : 235–239.
Hooge F.N. (1976) 1./f noise, physica 83B : 14–23.
Kurokawa K. (1968) Noise in synchronized oscillators. IEEE Trans. MTT, Vol. 16, n° 4 : 234–240.
Nougier J.P. et al (1985) Method for modeling the noise of submicron devices. Physica 129 B : 580–582.
Nougier J.P. et al (1983) Microscopic spatial correlations at thermal equilibrium in non polar semiconductors** Noise in physical systems and 1/f noise. North Holland, ed by M. Savelli, G. Lecoy: 15–19.
Nougier J.P. et al (1981) Mathematical formulation of the impedance field method. Application to the noise in the channel of field effect transistors in Proc of 6th Int. Conf. Noise phy. Systems: 42–46.
Nougier J.P. (1991) Noise in devices: Definition modelling III-V microelectronics. J.P. Nougier Editor. Elsevier Science publishers: 183–238.
Nougier J.P. (1978) in Noise in Physical systems. Springer Ser. Electrophys. Vol. 2, Ed by D. Wolf. : 71.
Pucel R.A. et al (1974) Signal and noise properties of GaAs field effect transistors. Advances Electron. Electron Physics. Vol. 38 : 135–265.
Shockley W. et al (1966) The impedance field method of noise calculation in active semiconductor devices. In quantum theory of atoms, Molecules and solid state. Academic Press, New York, 1966 : 537–563.
Thornber K.K. et al (1974), Structure of the langevin and impedance field methods of calculating noise in devices. Solid State Elect. Vol. 17 : 587–590.
Van Vliet K.M. et al (1975) Noise in single injection diodes. A survey of methods. J. Appl. Phys. Vol. 46, n° 4 : 1804–1813.
Van Vliet K.M. (1979) the transfer-impedance method for noise in field-effect transistors. Solid state Elec. vol. 22 : 233–236.
Van der Ziel A. (1988) Unified Presentation of 1/f Noise in Electronic Devices. Fundamental 1/f Noise sources. Proc. IEEE, vol. 76, n° 3 : 233–258.
Van der Ziel A (1962) Thermal noise in field effect Transistors. Proc. IRE 50 : 1808–1812.
Whiteside C. (1968) the DC, AC and noise properties of the GaAs/GaAlAs Modulation-doped Field effect transistor channel. IEEE Trans. on Electron. Dev. vol. 33.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1993 Springer-Verlag London Limited
About this chapter
Cite this chapter
Cappy, A. (1993). Noise Modelling. In: Snowden, C.M., Miles, R.E. (eds) Compound Semiconductor Device Modelling. Springer, London. https://doi.org/10.1007/978-1-4471-2048-3_10
Download citation
DOI: https://doi.org/10.1007/978-1-4471-2048-3_10
Publisher Name: Springer, London
Print ISBN: 978-1-4471-2050-6
Online ISBN: 978-1-4471-2048-3
eBook Packages: Springer Book Archive