## Abstract

The traditional view of semiconductor device operation is based around a carrier transport model described by a set of semiconductor equations, which are often regarded as being phenomenological in origin. In a broader sense, carrier transport in semiconductor devices can be characterised in terms of either classical, semiclassical or quantum physical models. The majority of contemporary devices can be adequately characterised using the generalised classical approach based on the Boltzmann transport equation. A set of semiconductor equations derived from the Boltzmann transport equation form the basis of the majority of current device models and a widely used in both closed-form analytical models and numerical simulations. A full solution of the Boltzmann transport equation would be formidable and the final equations used in the models are arrived at after a series of simplifying approximations and depart significantly from the original form of the Boltzmann expression.

### Keywords

Microwave Recombination GaAs Gallium Auger## Preview

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