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Semiconductor Device Modelling pp 207–226Cite as

Quantum Transport Modelling

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Abstract

The following lectures are an elementary introduction to the computer modelling of quantum transport and tunnelling in very small structures. The emphasis is on quantum ballistic systems for which collision processes are less significant than the free carrier motion in the strongly inhomogeneous (and possibly quantising) potential fields provided by the device structure. Quantum ballistic transport occurs when the carrier transit time is substantially shorter than the mean free time for inelastic collisions. Effects which may arise include size quantisation, localisation phenomena, low-dimensional effects, tunnelling, resonance and interference phenomena.

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Author information

Authors and Affiliations

  1. University of Glasgow, UK

    John R. Barker

Authors
  1. John R. Barker
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Editor information

Editors and Affiliations

  1. Department of Electrical and Electronic Engineering, University of Leeds, L52 9JT, Leeds, UK

    Christopher M. Snowden BSc, MSc, PhD, CEng, MIEE, MIEEE

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© 1989 Springer-Verlag Berlin Heidelberg

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Barker, J.R. (1989). Quantum Transport Modelling. In: Snowden, C.M. (eds) Semiconductor Device Modelling. Springer, London. https://doi.org/10.1007/978-1-4471-1033-0_13

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  • DOI: https://doi.org/10.1007/978-1-4471-1033-0_13

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-4471-1259-4

  • Online ISBN: 978-1-4471-1033-0

  • eBook Packages: Springer Book Archive

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