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High-/Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS pp 81–119Cite as

A Mixed-Voltage Unified Receiver Front-End for Full-Band Mobile TV in 65-nm CMOS

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Part of the book series: Analog Circuits and Signal Processing ((ACSP))

Abstract

With improved device parasitics in nm-length CMOS processes, wideband RF circuits offer the desired compactness and power efficiency for realizing multi-band multi-standard radios. This chapter describes a receiver front-end (RFE) targeting the mobile-TV applications using mixed-voltage techniques. It covers the VHF-III (174–248 MHz), UHF (470–862 MHz) and L (1.4–1.7 GHz) bands, where standards like T-DMB, ISDB-T, DVB-H and DMB-T are resided. In order to meet the noise and linearity specifications [1], while avoiding external baluns or repeated RFEs that were still common in existing solutions [1, 2], a number of circuit techniques are proposed to enhance the performance, power and area efficiencies [3]. Together they lead to state-of-the-art performance, while saving 58% area compared to the 1.1 mm2 reported in [2]. The key design considerations are outlined as follows.

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Authors and Affiliations

  1. University of Macau, Taipa, Macao, China

    Pui-In Mak & Rui Paulo Martins

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  1. Pui-In Mak
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  2. Rui Paulo Martins
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Mak, PI., Martins, R.P. (2012). A Mixed-Voltage Unified Receiver Front-End for Full-Band Mobile TV in 65-nm CMOS. In: High-/Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS. Analog Circuits and Signal Processing. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-9539-1_5

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  • DOI: https://doi.org/10.1007/978-1-4419-9539-1_5

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  • Print ISBN: 978-1-4419-9538-4

  • Online ISBN: 978-1-4419-9539-1

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