Abstract
This chapter presents a number of circuit techniques enforced in the design of an electrostatic discharge (ESD)-protected ultra-wideband (UWB) low-noise amplifier (LNA) for mobile-TV applications. Unlike the design of narrowband LNAs, concurrent reception over a wide range of spectrum necessitates the LNA to feature high linearity, preventing desensitization by the high-power blockers. This requirement, in conjunction with the obvious design goals of ESD protected input, low noise figure (NF), low power, impedance match and high gain, constitute hard tradeoffs to obtain a sensible balance and good compromise among all. The proposed LNA is to cover the full band of mobile-TV services from 170 to 1,700 MHz such that only one LNA is necessary to support multiple standards. It features a PMOS-based open-source input structure to optimize the I/O swings under a mixed-voltage ESD protection while offering an inductorless broadband input impedance match. The amplification core exploiting double current reuse and single-stage thermal-noise cancellation enhances the gain and noise performances with high power efficiency. Optimized in a 90-nm 1.2/2.5-V CMOS process with practical issues taken into account, the LNA using a constant-g m bias circuit achieves competitive and robust performances over process, voltage and temperature (PVT) variation. The simulated voltage gain is 20.6 dB, noise figure is 2.4–2.7 dB and IIP3 is +10.8 dBm. The power consumption is 9.6 mW at 1.2 V. |S11| < –10 dB is achieved up to 1.9 GHz without needing any external resonant network. Human Body Model ESD zapping tests of ±4 kV at the input pins cause no failure of any device.
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P.-I. Mak, S.-P. U and R. P. Martins, “Transceiver Architecture Selection – Review, State-of-the-Art Survey and Case Study,” IEEE Circuits and Systems Magazine, Vol. 7, Issue 2, pp. 6–25, June 2007.
Vassiliou et al., “A 65 nm CMOS Multistandard, Multiband TV Tuner for Mobile and Multimedia Applications,” IEEE J. of Solid- State Circuits, vol. 43, no. 7, pp. 1522–1533, Jul. 2008.
P. Antoine, et al., “A Direct-Conversion Receiver for DVB-H,” in IEEE ISSCC, Digest of Technical Papers, pp. 426–427, Feb. 2005.
D. Saias, et al., “A 0.12μm CMOS DVB-T Tuner,” in IEEE ISSCC, Digest of Technical Papers, pp. 430–431, Feb. 2005.
I. Vassiliou et al., “A 0.18μm CMOS, Dual-Band, Direct-Conversion DVB-H Receiver,” in IEEE ISSCC, Digest of Technical Papers, pp. 606–607, Feb. 2006.
Falco Electronics SMD RF Balun, Available [online]: http://www.falcomex.com/products/3/04-00.asp
I. V R. Bagheri, A. Mirzaei, S. Chehrazi, M. Heidari, M. Lee, M. Mikhemar, W. Tang and A. Abidi, “An 800MHz to 5GHz Software-Defined Radio Receiver in 90nm CMOS,” IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, pp. 480–481, Feb. 2006.
W. Zhuo, S. Shekhar, S. Embabi, J. Gyvez, D. Allstot and E. Sanchez-Sinencio, “A Capacitor Cross-Coupled Common-Gate Low-Noise Amplifier,” in IEEE Trans. On CAS-II: Express Briefs, vol. 52, no. 12, pp. 875–879, Dec. 2005.
C.-F. Liao and S.-I Liu, “A Broadband Noise-Canceling CMOS LNA for 3.1–10.6-GHz UWB Receivers,” IEEE J. of Solid-State Circuits, vol. 42, no. 2, pp. 329–339, Feb. 2007.
E. A. Klumperink, F. Bruccoleri, P. Stroet and B. Nauta, “Amplifiers Exploiting Thermal Noise Canceling: A Review” in Proc. of Gallium Arsenide and other compound semiconductor Application Symp. (GAAS), pp. 371–374, Oct. 2004.
K. Bhatia, S. Hyvonen and E. Rosenbaum, “A Compact, ESD- Protected, SiGe BiCMOS LNA for Ultra-Wideband Applications,” IEEE J. Solid-State Circuits, vol. 42, no. 5, pp. 1121–1130, May 2007.
G. Banerjee, K. Soumyanath and D. J. Allstot, “Desensitized CMOS Low-Noise Amplifiers,” IEEE Trans. On CAS-I: Regular Papers, vol. 55, no. 3, pp. 752–765, Apr. 2008.
R. Zele and D. Allstot, “Low Power CMOS Continuous-Time Filters,” IEEE J. of Solid-State Circuits, vol. 31, no. 2, pp. 157–168, Feb. 1996.
ESD Sensitivity Testing: Human Body Model (HBM) – Component Level, ESD Association Standards, 1993.
P.-I. Mak and R. P. Martins, “Design of an ESD-Protected Ultra-Wideband LNA in Nanoscale CMOS for Full-Band Mobile TV Tuners,” IEEE Transactions on Circuits and Systems – I: Regular Papers, vol. 56, no. 5, pp. 933–942, May 2009.
S. Blaakmeer, E. Klumperink, D. Leenaerts and B. Nauta, “Wideband Balun-LNA With Simultaneous Output Balancing, Noise-Canceling and Distortion-Canceling,” IEEE J. of Solid-State Circuits, vol. 43, no. 6, pp. 1341–1350, Jun. 2008.
W.-H. Chen, G. Liu, B. Zdravko and A. M. Niknejad, “A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation,” IEEE J. of Solid-State Circuits, vol. 43, no. 5, pp. 1164–1176, May 2008.
Y. Liao, Z. Tang and H. Min, “A CMOS Wide-Band Low-Noise Amplifier with Balun-Based Noise-Canceling Technique,” in Proc. IEEE A-SSCC, pp. 91–94, Nov. 2007.
M. Vidojkovic, M. Sanduleanu, J. Tang, P.Baltus and A. Roermund, “A 1.2 V, Inductorless, Broad-band LNA in 90 nm CMOS LP,” in Proc. IEEE RFIC symp., pp. 53–56, Jun. 2007.
A. Amer, E. Hegazi and H. Ragai, “A Low-Power Wideband CMOS LNA for WiMax,” IEEE Trans. On CAS-II: Express Briefs, vol. 54, no. 1, pp. 4–8, Jan. 2007.
Y.-J. Emery Chen and Y.-I. Huang, “Development of Integrated Broad-Band CMOS Low-Noise Amplifiers,” IEEE Trans. On CAS-I: Regular Papers, vol. 54, no. 10, pp. 2120–2127, Oct. 2007.
B. Martineau, et al., “A Wideband LNA for Wireless Multi-standard Receiver in 130 nm SOI Process”, in Proc. IEEE PRIME, pp. 449–452, Jun. 2006.
S. Wang, A. Niknejad and R. Brodersen, “A Sub-mW 960-MHz Ultra-Wideband CMOS LNA,” in Proc. IEEE RFIC symp., pp. 35–38, Jun. 2005.
S. Chehrazi, A. Mirzaei, R. Bagheri, and A. Abidi, “A 6.5 GHz Wideband CMOS Low Noise Amplifier for Multi-Band Use,” in Proc. IEEE CICC, pp. 801–804, Sept. 2005.
R. Salerno, M. Tiebout, H. Paule, M. Streibl, C. Sandner and K. Kropf, “ESD-Protected CMOS 3–5GHz Wideband LNA+PGA Design for UWB,” in Proc. ESSCIRC, pp.219–222, Sept. 2005.
R. Molavi, S. Mirabbasi, and M. Hashemi, “A Wideband CMOS LNA Design Approach,” in Proc. IEEE ISCAS, pp. 5107–5110, May 2005.
D. R. Huang, et al., “A 40–900 MHz Broadband CMOS Differential LNA with Gain-Control for DTV RF Tuner”, in Proc. IEEE A-SSCC, pp. 465–468, Nov. 2005.
Y. Wang, J. S. Duster, and K. T. Kornegay, “Design of an Ultra- Wideband Low Noise Amplifier in 0.13μm CMOS,” in Proc. IEEE ISCAS, pp. 5067–5070, May 2005.
C.-W. Kim, M. S. Kang, P. T. Anh, H. T. Kim, and S. G. Lee, “An Ultra-Wideband CMOS Low Noise Amplifier for 3–5-GHz UWB System,” IEEE J. Solid-State Circuits, vol. 40, no. 2, pp. 544–547, Feb. 2005.
J. Lerdworatawee and W. Namgoong, “Wide-Band CMOS Cascode Low-Noise Amplifier Design Based on Source Degeneration Topology,” IEEE Trans. On CAS-I: Regular Papers, vol. 52, no. 11, pp. 2327–2334, Nov. 2005.
A. Bevilacqua and A. Niknejad, “An Ultra-Wideband CMOS LNA for 3.1 to 10.6 GHz Wireless Receivers,” in IEEE ISSCC Digest of Technical Papers, pp. 382–383, Feb. 2004.
H. Doh, Y. Jeong, S. Jung, and Y. Joo, “Design of CMOS UWB Low Noise Amplifier with Cascade Feedback,” in Proc. IEEE MWSCAS, pp. II-641–II-644, Jul. 2004.
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Mak, PI., Martins, R.P. (2012). A Full-Band Mobile-TV LNA with Mixed-Voltage ESD Protection in 90-nm CMOS. In: High-/Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS. Analog Circuits and Signal Processing. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-9539-1_3
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DOI: https://doi.org/10.1007/978-1-4419-9539-1_3
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