Abstract
Instead of just following the rapid downsizing of V DD mixed-voltag/mixed-voltage RF and analog CMOS circuits and systems have emerged as a prospective alternative [1], to deal with the wireless technology trends such as software-defined radio and cognitive radio; both are hungry for bandwidth and dynamic range. An elevated V DD, or a hybrid use of I/O and core V DD’s, in conjunction with optimum selection of thin- and thick-oxide MOSFETS open up much new design possibilities in re-defining circuit topologies, while maintaining most speed and area benefits of advanced fine linewidth processes [2]. Voltage-conscious bias techniques and overdrive protection circuits are simple and low overhead techniques to ensure the reliability of all devices. This chapter studies the basic design concept, system design considerations and some state-of-the-art circuit examples. A wide variety of analog and RF CMOS circuits featuring high-/mixed-V DD is discussed. Those circuits comprise power amplifier, low-noise amplifier, mixer, operational-amplifier-based analog circuits, sample-and-hold amplifier and line driver. Reliability metrics such as oxide breakdown voltage, hot carrier injection (HCI), time dependent dielectric breakdown (TDDB), and bias temperature instability (BTI) will be briefly addressed. The involved concepts and techniques are generally extendable to different wireless and non-wireless applications.
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Mak, PI., Martins, R.P. (2012). General Considerations of High-/Mixed-VDD Analog and RF Circuits and Systems. In: High-/Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS. Analog Circuits and Signal Processing. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-9539-1_2
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DOI: https://doi.org/10.1007/978-1-4419-9539-1_2
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