Abstract
The switching speed of a MOSFET is a function of its current drive strength, its internal capacitances, and the RC load it drives. In Chapter 4, test structures for characterization of MOSFET capacitances are described. To first order these capacitance components, within a technology node, scale with the device dimensions. The current drive of a MOSFET, on the other hand, can be modulated over a much wider range by engineering the doping in the channel, using carrier mobility enhancement techniques, modifying the properties and dimensions of constituent layers, and varying its physical layout. Statistical fluctuations in the number of dopant atoms in the channel and local linewidth variations lead to variability in parameters of nominally identical MOSFETs. Hence, the focus on MOSFET macro design and test in this chapter primarily concerns DC I–V and variability characterization.
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Bhushan, M., Ketchen, M.B. (2011). MOSFETs. In: Microelectronic Test Structures for CMOS Technology. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-9377-9_5
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DOI: https://doi.org/10.1007/978-1-4419-9377-9_5
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